IXYS HiperFET Type N-Channel MOSFET, 90 A, 850 V Enhancement, 3-Pin PLUS264

RS-artikelnummer:: 146-4383
Distrelec artikelnummer:: 302-53-305
Tillv. art.nr:: IXFB90N85X
Tillverkare / varumärke:: IXYS

IXYS HiperFET Type N-Channel MOSFET, 90 A, 850 V Enhancement, 3-Pin PLUS264

Mängdrabatt möjlig

Antal (1 enhet)*

232,60 kr

(exkl. moms)

290,75 kr

(inkl. moms)

GRATIS leverans för online beställningar över 500,00 kr

I lager

Dessutom levereras 23 enhet(er) från den 26 december 2025

Behöver du mer? Ange den kvantitet du behöver och klicka på "Kontrollera leveransdatum"

Enheter	Per enhet
1 - 4	232,60 kr
5 - 9	220,97 kr
10 +	215,16 kr

*vägledande pris

RS-artikelnummer:: 146-4383
Distrelec artikelnummer:: 302-53-305
Tillv. art.nr:: IXFB90N85X
Tillverkare / varumärke:: IXYS

Specifikationer

Datablad

Lagstiftning och ursprungsland

Produktdetaljer

Hitta liknande produkter genom att välja ett eller flera attribut.

Välj alla	Attribut	Värde
	Brand	IXYS
	Channel Type	Type N
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	90A
	Maximum Drain Source Voltage Vds	850V
	Series	HiperFET
	Package Type	PLUS264
	Mount Type	Through Hole
	Pin Count	3
	Maximum Drain Source Resistance Rds	41mΩ
	Channel Mode	Enhancement
	Maximum Gate Source Voltage Vgs	30 V
	Maximum Power Dissipation Pd	1.79kW
	Typical Gate Charge Qg @ Vgs	340nC
	Minimum Operating Temperature	-55°C
	Forward Voltage Vf	1.4V
	Maximum Operating Temperature	150°C
	Height	26.59mm
	Width	5.31 mm
	Length	20.29mm
	Standards/Approvals	No
	Automotive Standard	No
	Distrelec Product Id	30253305

	Välj alla
	Brand IXYS
	Channel Type Type N
	Product Type MOSFET
	Maximum Continuous Drain Current Id 90A
	Maximum Drain Source Voltage Vds 850V
	Series HiperFET
	Package Type PLUS264
	Mount Type Through Hole
	Pin Count 3
	Maximum Drain Source Resistance Rds 41mΩ
	Channel Mode Enhancement
	Maximum Gate Source Voltage Vgs 30 V
	Maximum Power Dissipation Pd 1.79kW
	Typical Gate Charge Qg @ Vgs 340nC
	Minimum Operating Temperature -55°C
	Forward Voltage Vf 1.4V
	Maximum Operating Temperature 150°C
	Height 26.59mm
	Width 5.31 mm
	Length 20.29mm
	Standards/Approvals No
	Automotive Standard No
	Distrelec Product Id 30253305

The 850V Ultra-Junction X-Class Power MOSFETs with fast body diodes represent a new power semiconductor product line from IXYS Corporation. These rugged devices display the lowest on-state resistances in the industry, enabling very high power density in high-voltage power conversion applications. Developed using the charge compensation principle and proprietary process technology, the new 850V devices exhibit the lowest on-state resistances (33 milliohm in the SOT-227 package and 41 milliohm in the PLUS264, for instance), along with low gate charges and superior dv/dt performance.

Ultra low on-resistance RDS(ON) and gate charge Qg

Fast body diode

dv/dt ruggedness

Avalanche rated

Low package inductance

International standard packages

IXYS HiperFET Type N-Channel MOSFET, 90 A, 850 V Enhancement, 3-Pin PLUS264

GRATIS leverans för online beställningar över 500,00 kr

relaterade länkar