P-Channel MOSFET, 1.2 A, 60 V, 3-Pin SOT-23 Vishay SI2309CDS-T1-GE3

RS-artikelnummer:: 710-3250
Tillv. art.nr:: SI2309CDS-T1-GE3
Tillverkare / varumärke:: Vishay

P-Channel MOSFET, 1.2 A, 60 V, 3-Pin SOT-23 Vishay SI2309CDS-T1-GE3

250 I lager för avsändande samma dag

340 Inom 1 arbetsdag(ar) (UK lager)

Pris (ex. moms) Var (i ett paket med 10)

4,48 kr

(exkl. moms)

5,60 kr

(inkl. moms)

Enheter	Per enhet	Per förpackning*
10 +	4,48 kr	44,80 kr

RS-artikelnummer:: 710-3250
Tillv. art.nr:: SI2309CDS-T1-GE3
Tillverkare / varumärke:: Vishay

Datasheet
ESD Control Selection Guide V1

Attribute	Value
Channel Type	P
Maximum Continuous Drain Current	1.2 A
Maximum Drain Source Voltage	60 V
Package Type	SOT-23
Mounting Type	Surface Mount
Pin Count	3
Maximum Drain Source Resistance	345 mΩ
Channel Mode	Enhancement
Minimum Gate Threshold Voltage	1V
Maximum Power Dissipation	1 W
Transistor Configuration	Single
Maximum Gate Source Voltage	-20 V, +20 V
Length	3.04mm
Maximum Operating Temperature	+150 °C
Transistor Material	Si
Typical Gate Charge @ Vgs	2.7 nC @ 4.5 V
Number of Elements per Chip	1
Width	1.4mm
Minimum Operating Temperature	-55 °C
Height	1.02mm

P-Channel MOSFET, 1.2 A, 60 V, 3-Pin SOT-23 Vishay SI2309CDS-T1-GE3

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