Vishay TrenchFET Type P-Channel MOSFET, 7.6 A, 30 V Enhancement, 3-Pin SOT-23 SI2369DS-T1-GE3

RS-artikelnummer:: 180-7798
Tillv. art.nr:: SI2369DS-T1-GE3
Tillverkare / varumärke:: Vishay

Vishay TrenchFET Type P-Channel MOSFET, 7.6 A, 30 V Enhancement, 3-Pin SOT-23 SI2369DS-T1-GE3

Mängdrabatt möjlig

Antal (1 förpackning med 25 enheter)*

84,675 kr

(exkl. moms)

105,85 kr

(inkl. moms)

GRATIS leverans för online beställningar över 500,00 kr

Håller på att utgå

75 kvar, redo att levereras
Sista 1 725 enhet(er) levereras från den 02 januari 2026

Enheter	Per enhet	Per förpackning*
25 - 225	3,387 kr	84,68 kr
250 - 600	3,324 kr	83,10 kr
625 - 1225	2,536 kr	63,40 kr
1250 - 2475	2,034 kr	50,85 kr
2500 +	1,698 kr	42,45 kr

*vägledande pris

RS-artikelnummer:: 180-7798
Tillv. art.nr:: SI2369DS-T1-GE3
Tillverkare / varumärke:: Vishay

Specifikationer

Datablad

Lagstiftning och ursprungsland

Produktdetaljer

Hitta liknande produkter genom att välja ett eller flera attribut.

Välj alla	Attribut	Värde
	Brand	Vishay
	Product Type	MOSFET
	Channel Type	Type P
	Maximum Continuous Drain Current Id	7.6A
	Maximum Drain Source Voltage Vds	30V
	Series	TrenchFET
	Package Type	SOT-23
	Mount Type	Surface
	Pin Count	3
	Maximum Drain Source Resistance Rds	40mΩ
	Channel Mode	Enhancement
	Minimum Operating Temperature	-55°C
	Typical Gate Charge Qg @ Vgs	11.4nC
	Maximum Power Dissipation Pd	1.6W
	Maximum Gate Source Voltage Vgs	20 V
	Forward Voltage Vf	-1.2V
	Maximum Operating Temperature	150°C
	Length	3.04mm
	Standards/Approvals	No
	Width	2.64 mm
	Height	1.12mm
	Automotive Standard	No

	Välj alla
	Brand Vishay
	Product Type MOSFET
	Channel Type Type P
	Maximum Continuous Drain Current Id 7.6A
	Maximum Drain Source Voltage Vds 30V
	Series TrenchFET
	Package Type SOT-23
	Mount Type Surface
	Pin Count 3
	Maximum Drain Source Resistance Rds 40mΩ
	Channel Mode Enhancement
	Minimum Operating Temperature -55°C
	Typical Gate Charge Qg @ Vgs 11.4nC
	Maximum Power Dissipation Pd 1.6W
	Maximum Gate Source Voltage Vgs 20 V
	Forward Voltage Vf -1.2V
	Maximum Operating Temperature 150°C
	Length 3.04mm
	Standards/Approvals No
	Width 2.64 mm
	Height 1.12mm
	Automotive Standard No

Datasheet

COO (Country of Origin):: CN

Vishay MOSFET

The Vishay surface mount P-channel MOSFET is a new age product with a drain-source resistance of 29mohm at a gate-source voltage of 10V. It has a maximum gate-source voltage of 20V and drain-source voltage of 30V. The MOSFET has a minimum and a maximum driving voltage of 4.5V and 10V respectively. It has continuous drain current of 7.6A and maximum power dissipation of 2.5W. MOSFET has been optimized for lower switching and conduction losses. The MOSFET offers excellent efficiency along with a long and productive life without compromising performance or functionality.

Features and Benefits

• Halogen free

• Lead (Pb) free

• Operating temperature ranges between -55°C and 150°C

• TrenchFET power MOSFET

Applications

• DC/DC converter

• For mobile computing

• Load switch

• Notebook adaptor switch

Certifications

• ANSI/ESD S20.20:2014

• BS EN 61340-5-1:2007

• Rg tested