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Vishay TrenchFET Type P-Channel MOSFET, 5 A, 30 V Enhancement, 3-Pin SOT-23 SI2347DS-T1-GE3

RS-artikelnummer:: 180-7778
Tillv. art.nr:: SI2347DS-T1-GE3
Tillverkare / varumärke:: Vishay

Vishay TrenchFET Type P-Channel MOSFET, 5 A, 30 V Enhancement, 3-Pin SOT-23 SI2347DS-T1-GE3

Mängdrabatt möjlig

Antal (1 förpackning med 50 enheter)*

105,15 kr

(exkl. moms)

131,45 kr

(inkl. moms)

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Dessutom levereras 4 850 enhet(er) från den 22 januari 2026

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Enheter	Per enhet	Per förpackning*
50 - 450	2,103 kr	105,15 kr
500 - 1200	1,474 kr	73,70 kr
1250 - 2450	1,369 kr	68,45 kr
2500 - 4950	1,263 kr	63,15 kr
5000 +	1,198 kr	59,90 kr

*vägledande pris

RS-artikelnummer:: 180-7778
Tillv. art.nr:: SI2347DS-T1-GE3
Tillverkare / varumärke:: Vishay

Specifikationer

Datablad

Lagstiftning och ursprungsland

Produktdetaljer

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Välj alla	Attribut	Värde
	Brand	Vishay
	Product Type	MOSFET
	Channel Type	Type P
	Maximum Continuous Drain Current Id	5A
	Maximum Drain Source Voltage Vds	30V
	Series	TrenchFET
	Package Type	SOT-23
	Mount Type	Surface
	Pin Count	3
	Maximum Drain Source Resistance Rds	42mΩ
	Channel Mode	Enhancement
	Forward Voltage Vf	-1.2V
	Maximum Power Dissipation Pd	1.1W
	Maximum Gate Source Voltage Vgs	20 V
	Minimum Operating Temperature	-55°C
	Typical Gate Charge Qg @ Vgs	14.5nC
	Maximum Operating Temperature	150°C
	Length	3.04mm
	Width	2.64 mm
	Height	1.12mm
	Standards/Approvals	No
	Automotive Standard	No

	Välj alla
	Brand Vishay
	Product Type MOSFET
	Channel Type Type P
	Maximum Continuous Drain Current Id 5A
	Maximum Drain Source Voltage Vds 30V
	Series TrenchFET
	Package Type SOT-23
	Mount Type Surface
	Pin Count 3
	Maximum Drain Source Resistance Rds 42mΩ
	Channel Mode Enhancement
	Forward Voltage Vf -1.2V
	Maximum Power Dissipation Pd 1.1W
	Maximum Gate Source Voltage Vgs 20 V
	Minimum Operating Temperature -55°C
	Typical Gate Charge Qg @ Vgs 14.5nC
	Maximum Operating Temperature 150°C
	Length 3.04mm
	Width 2.64 mm
	Height 1.12mm
	Standards/Approvals No
	Automotive Standard No

Datasheet

COO (Country of Origin):: CN

Vishay MOSFET

The Vishay surface mount P-channel MOSFET is a new age product with a drain-source voltage of 30V and a maximum gate-source voltage of 20V. It has drain-source resistance of 42mohm at a gate-source voltage of 10V. It has a maximum power rating of 1.7W and continuous drain current of 5A. The minimum and a maximum driving voltage for this transistor are 4.5V and 10V respectively. The MOSFET has been optimized for lower switching and conduction losses. The MOSFET offers excellent efficiency along with a long and productive life without compromising performance or functionality.

Features and Benefits

• Halogen free

• Lead (Pb) free

• Operating temperature ranges between -55°C and 150°C

• TrenchFET power MOSFET

Applications

• DC/DC converter

• Load switch

• Notebook adaptor switch

• Power management

Certifications

• ANSI/ESD S20.20:2014

• BS EN 61340-5-1:2007

• Rg tested