Vishay Si1302DL Type N-Channel MOSFET, 600 mA, 30 V Enhancement, 3-Pin SC-70 SI1302DL-T1-E3
- RS-artikelnummer:
- 655-6795
- Tillv. art.nr:
- SI1302DL-T1-E3
- Tillverkare / varumärke:
- Vishay
Mängdrabatt möjlig
Antal (1 förpackning med 10 enheter)*
16,35 kr
(exkl. moms)
20,44 kr
(inkl. moms)
GRATIS leverans för online beställningar över 500,00 kr
Sista RS lager
- Dessutom levereras 1 040 enhet(er) från den 19 januari 2026
- Sista 2 350 enhet(er) levereras från den 26 januari 2026
Enheter | Per enhet | Per förpackning* |
|---|---|---|
| 10 - 90 | 1,635 kr | 16,35 kr |
| 100 - 490 | 1,602 kr | 16,02 kr |
| 500 - 990 | 1,557 kr | 15,57 kr |
| 1000 - 2490 | 1,523 kr | 15,23 kr |
| 2500 + | 1,478 kr | 14,78 kr |
*vägledande pris
- RS-artikelnummer:
- 655-6795
- Tillv. art.nr:
- SI1302DL-T1-E3
- Tillverkare / varumärke:
- Vishay
Specifikationer
Datablad
Lagstiftning och ursprungsland
Produktdetaljer
Hitta liknande produkter genom att välja ett eller flera attribut.
Välj alla | Attribut | Värde |
|---|---|---|
| Brand | Vishay | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 600mA | |
| Maximum Drain Source Voltage Vds | 30V | |
| Series | Si1302DL | |
| Package Type | SC-70 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 480mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 0.8V | |
| Typical Gate Charge Qg @ Vgs | 0.86nC | |
| Maximum Power Dissipation Pd | 280mW | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Operating Temperature | 150°C | |
| Width | 1.35 mm | |
| Length | 2.2mm | |
| Standards/Approvals | No | |
| Height | 1mm | |
| Automotive Standard | No | |
| Välj alla | ||
|---|---|---|
Brand Vishay | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 600mA | ||
Maximum Drain Source Voltage Vds 30V | ||
Series Si1302DL | ||
Package Type SC-70 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 480mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 0.8V | ||
Typical Gate Charge Qg @ Vgs 0.86nC | ||
Maximum Power Dissipation Pd 280mW | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Operating Temperature 150°C | ||
Width 1.35 mm | ||
Length 2.2mm | ||
Standards/Approvals No | ||
Height 1mm | ||
Automotive Standard No | ||
N-Channel MOSFET, 30V to 50V, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
relaterade länkar
- Vishay Si1302DL Type N-Channel MOSFET 30 V Enhancement, 3-Pin SC-70
- DiodesZetex BSS127 Type N-Channel MOSFET 600 V Enhancement, 3-Pin SC-59
- DiodesZetex BSS127 Type N-Channel MOSFET 600 V Enhancement, 3-Pin SC-59 BSS127SSN-7
- Vishay N-Channel MOSFET Transistor 30 V, 6-Pin SC-70 SI1470DH-T1-E3
- Vishay SIA Type N-Channel MOSFET 40 V Enhancement, 7-Pin SC-70 SIA4446DJ-T1-GE3
- Vishay TrenchFET Type P-Channel MOSFET 12 V Enhancement, 6-Pin SC-70 SIA447DJ-T1-GE3
- Vishay SiA461DJ Type P-Channel MOSFET 20 V Enhancement, 6-Pin SC-70 SIA461DJ-T1-GE3
- Vishay Si1441EDH Type P-Channel MOSFET 20 V Enhancement, 6-Pin SC-70 SI1441EDH-T1-GE3
