Vishay TrenchFET Type P-Channel MOSFET, 12 A, 12 V Enhancement, 6-Pin SC-70 SIA447DJ-T1-GE3
- RS-artikelnummer:
- 787-9288
- Tillv. art.nr:
- SIA447DJ-T1-GE3
- Tillverkare / varumärke:
- Vishay
Mängdrabatt möjlig
Antal (1 längd med 10 enheter)*
45,70 kr
(exkl. moms)
57,10 kr
(inkl. moms)
GRATIS leverans för online beställningar över 500,00 kr
I lager
- 2 060 enhet(er) är redo att levereras
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Enheter | Per enhet | Per Längd* |
|---|---|---|
| 10 - 90 | 4,57 kr | 45,70 kr |
| 100 - 490 | 4,346 kr | 43,46 kr |
| 500 - 990 | 3,898 kr | 38,98 kr |
| 1000 - 2490 | 2,374 kr | 23,74 kr |
| 2500 + | 2,195 kr | 21,95 kr |
*vägledande pris
- RS-artikelnummer:
- 787-9288
- Tillv. art.nr:
- SIA447DJ-T1-GE3
- Tillverkare / varumärke:
- Vishay
Specifikationer
Datablad
Lagstiftning och ursprungsland
Produktdetaljer
Hitta liknande produkter genom att välja ett eller flera attribut.
Välj alla | Attribut | Värde |
|---|---|---|
| Brand | Vishay | |
| Product Type | MOSFET | |
| Channel Type | Type P | |
| Maximum Continuous Drain Current Id | 12A | |
| Maximum Drain Source Voltage Vds | 12V | |
| Package Type | SC-70 | |
| Series | TrenchFET | |
| Mount Type | Surface | |
| Pin Count | 6 | |
| Maximum Drain Source Resistance Rds | 71mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 52nC | |
| Forward Voltage Vf | -1.2V | |
| Maximum Gate Source Voltage Vgs | 8 V | |
| Maximum Power Dissipation Pd | 19W | |
| Maximum Operating Temperature | 150°C | |
| Length | 1.7mm | |
| Standards/Approvals | No | |
| Height | 0.8mm | |
| Width | 1.7 mm | |
| Automotive Standard | No | |
| Välj alla | ||
|---|---|---|
Brand Vishay | ||
Product Type MOSFET | ||
Channel Type Type P | ||
Maximum Continuous Drain Current Id 12A | ||
Maximum Drain Source Voltage Vds 12V | ||
Package Type SC-70 | ||
Series TrenchFET | ||
Mount Type Surface | ||
Pin Count 6 | ||
Maximum Drain Source Resistance Rds 71mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 52nC | ||
Forward Voltage Vf -1.2V | ||
Maximum Gate Source Voltage Vgs 8 V | ||
Maximum Power Dissipation Pd 19W | ||
Maximum Operating Temperature 150°C | ||
Length 1.7mm | ||
Standards/Approvals No | ||
Height 0.8mm | ||
Width 1.7 mm | ||
Automotive Standard No | ||
P-Channel MOSFET, TrenchFET Gen III, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
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