Vishay Si1441EDH Type P-Channel MOSFET, 4 A, 20 V Enhancement, 6-Pin SC-70 SI1441EDH-T1-GE3
- RS-artikelnummer:
- 812-3079
- Tillv. art.nr:
- SI1441EDH-T1-GE3
- Tillverkare / varumärke:
- Vishay
Mängdrabatt möjlig
Antal (1 längd med 20 enheter)*
80,86 kr
(exkl. moms)
101,08 kr
(inkl. moms)
GRATIS leverans för online beställningar över 500,00 kr
Tillfälligt slut
- Leverans från den 27 april 2026
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Enheter | Per enhet | Per Längd* |
|---|---|---|
| 20 - 180 | 4,043 kr | 80,86 kr |
| 200 - 480 | 3,069 kr | 61,38 kr |
| 500 - 980 | 2,834 kr | 56,68 kr |
| 1000 - 1980 | 2,431 kr | 48,62 kr |
| 2000 + | 2,106 kr | 42,12 kr |
*vägledande pris
- RS-artikelnummer:
- 812-3079
- Tillv. art.nr:
- SI1441EDH-T1-GE3
- Tillverkare / varumärke:
- Vishay
Specifikationer
Datablad
Lagstiftning och ursprungsland
Produktdetaljer
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Välj alla | Attribut | Värde |
|---|---|---|
| Brand | Vishay | |
| Channel Type | Type P | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 4A | |
| Maximum Drain Source Voltage Vds | 20V | |
| Package Type | SC-70 | |
| Series | Si1441EDH | |
| Mount Type | Surface | |
| Pin Count | 6 | |
| Maximum Drain Source Resistance Rds | 100mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 2.8W | |
| Maximum Gate Source Voltage Vgs | 10 V | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 22nC | |
| Forward Voltage Vf | -1.2V | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Width | 1.35 mm | |
| Height | 1mm | |
| Length | 2.2mm | |
| Automotive Standard | No | |
| Välj alla | ||
|---|---|---|
Brand Vishay | ||
Channel Type Type P | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 4A | ||
Maximum Drain Source Voltage Vds 20V | ||
Package Type SC-70 | ||
Series Si1441EDH | ||
Mount Type Surface | ||
Pin Count 6 | ||
Maximum Drain Source Resistance Rds 100mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 2.8W | ||
Maximum Gate Source Voltage Vgs 10 V | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 22nC | ||
Forward Voltage Vf -1.2V | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Width 1.35 mm | ||
Height 1mm | ||
Length 2.2mm | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
P-Channel MOSFET, 8V to 20V, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
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