DiodesZetex BSS127 Type N-Channel MOSFET, 70 mA, 600 V Enhancement, 3-Pin SC-59 BSS127SSN-7
- RS-artikelnummer:
- 822-2176
- Tillv. art.nr:
- BSS127SSN-7
- Tillverkare / varumärke:
- DiodesZetex
Mängdrabatt möjlig
Antal (1 förpackning med 50 enheter)*
145,80 kr
(exkl. moms)
182,25 kr
(inkl. moms)
GRATIS leverans för online beställningar över 500,00 kr
Tillfälligt slut
- Leverans från den 13 april 2026
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Enheter | Per enhet | Per förpackning* |
|---|---|---|
| 50 - 200 | 2,916 kr | 145,80 kr |
| 250 - 450 | 1,398 kr | 69,90 kr |
| 500 - 1200 | 1,324 kr | 66,20 kr |
| 1250 - 2450 | 1,015 kr | 50,75 kr |
| 2500 + | 0,959 kr | 47,95 kr |
*vägledande pris
- RS-artikelnummer:
- 822-2176
- Tillv. art.nr:
- BSS127SSN-7
- Tillverkare / varumärke:
- DiodesZetex
Specifikationer
Datablad
Lagstiftning och ursprungsland
Produktdetaljer
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Välj alla | Attribut | Värde |
|---|---|---|
| Brand | DiodesZetex | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 70mA | |
| Maximum Drain Source Voltage Vds | 600V | |
| Series | BSS127 | |
| Package Type | SC-59 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 190Ω | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 1.5V | |
| Typical Gate Charge Qg @ Vgs | 1.08nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 1.25W | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Length | 3.1mm | |
| Width | 1.7 mm | |
| Height | 1.3mm | |
| Automotive Standard | AEC-Q101 | |
| Välj alla | ||
|---|---|---|
Brand DiodesZetex | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 70mA | ||
Maximum Drain Source Voltage Vds 600V | ||
Series BSS127 | ||
Package Type SC-59 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 190Ω | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 1.5V | ||
Typical Gate Charge Qg @ Vgs 1.08nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 1.25W | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Length 3.1mm | ||
Width 1.7 mm | ||
Height 1.3mm | ||
Automotive Standard AEC-Q101 | ||
N-Channel MOSFET, 100V to 950V, Diodes Inc
MOSFET Transistors, Diodes Inc.
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