Vishay IRF9540S Type P-Channel MOSFET, 19 A, 100 V Enhancement, 3-Pin TO-263 IRF9540SPBF
- RS-artikelnummer:
- 650-4205
- Tillv. art.nr:
- IRF9540SPBF
- Tillverkare / varumärke:
- Vishay
Mängdrabatt möjlig
Antal (1 förpackning med 5 enheter)*
137,90 kr
(exkl. moms)
172,40 kr
(inkl. moms)
GRATIS leverans för online beställningar över 500,00 kr
I lager
- Dessutom levereras 5 enhet(er) från den 05 januari 2026
- Dessutom levereras 820 enhet(er) från den 12 januari 2026
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Enheter | Per enhet | Per förpackning* |
|---|---|---|
| 5 - 20 | 27,58 kr | 137,90 kr |
| 25 - 45 | 24,85 kr | 124,25 kr |
| 50 - 120 | 23,718 kr | 118,59 kr |
| 125 - 245 | 22,064 kr | 110,32 kr |
| 250 + | 20,686 kr | 103,43 kr |
*vägledande pris
- RS-artikelnummer:
- 650-4205
- Tillv. art.nr:
- IRF9540SPBF
- Tillverkare / varumärke:
- Vishay
Specifikationer
Datablad
Lagstiftning och ursprungsland
Produktdetaljer
Hitta liknande produkter genom att välja ett eller flera attribut.
Välj alla | Attribut | Värde |
|---|---|---|
| Brand | Vishay | |
| Product Type | MOSFET | |
| Channel Type | Type P | |
| Maximum Continuous Drain Current Id | 19A | |
| Maximum Drain Source Voltage Vds | 100V | |
| Series | IRF9540S | |
| Package Type | TO-263 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 200mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 150W | |
| Forward Voltage Vf | -100V | |
| Typical Gate Charge Qg @ Vgs | 61nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Operating Temperature | 175°C | |
| Length | 10.67mm | |
| Height | 4.83mm | |
| Standards/Approvals | No | |
| Width | 9.65 mm | |
| Automotive Standard | No | |
| Välj alla | ||
|---|---|---|
Brand Vishay | ||
Product Type MOSFET | ||
Channel Type Type P | ||
Maximum Continuous Drain Current Id 19A | ||
Maximum Drain Source Voltage Vds 100V | ||
Series IRF9540S | ||
Package Type TO-263 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 200mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 150W | ||
Forward Voltage Vf -100V | ||
Typical Gate Charge Qg @ Vgs 61nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Operating Temperature 175°C | ||
Length 10.67mm | ||
Height 4.83mm | ||
Standards/Approvals No | ||
Width 9.65 mm | ||
Automotive Standard No | ||
P-Channel MOSFET, 100V to 400V, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
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