Infineon HEXFET Type P-Channel MOSFET, 38 A, 100 V Enhancement, 3-Pin I2PAK
- RS-artikelnummer:
- 650-3707
- Tillv. art.nr:
- IRF5210LPBF
- Tillverkare / varumärke:
- Infineon
Mängdrabatt möjlig
Antal (1 förpackning med 5 enheter)*
142,47 kr
(exkl. moms)
178,09 kr
(inkl. moms)
GRATIS leverans för online beställningar över 500,00 kr
Tillfälligt slut
- 5 enhet(er) levereras från den 05 januari 2026
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Enheter | Per enhet | Per förpackning* |
|---|---|---|
| 5 - 20 | 28,494 kr | 142,47 kr |
| 25 - 45 | 25,648 kr | 128,24 kr |
| 50 - 120 | 23,946 kr | 119,73 kr |
| 125 - 245 | 22,244 kr | 111,22 kr |
| 250 + | 20,788 kr | 103,94 kr |
*vägledande pris
- RS-artikelnummer:
- 650-3707
- Tillv. art.nr:
- IRF5210LPBF
- Tillverkare / varumärke:
- Infineon
Specifikationer
Datablad
Lagstiftning och ursprungsland
Produktdetaljer
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Välj alla | Attribut | Värde |
|---|---|---|
| Brand | Infineon | |
| Channel Type | Type P | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 38A | |
| Maximum Drain Source Voltage Vds | 100V | |
| Package Type | I2PAK (TO-262) | |
| Series | HEXFET | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 60mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 1.6V | |
| Maximum Power Dissipation Pd | 170W | |
| Maximum Gate Source Voltage Vgs | ±20 V | |
| Typical Gate Charge Qg @ Vgs | 150nC | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | Lead-Free | |
| Length | 10.54mm | |
| Height | 10.54mm | |
| Width | 4.69 mm | |
| Automotive Standard | No | |
| Välj alla | ||
|---|---|---|
Brand Infineon | ||
Channel Type Type P | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 38A | ||
Maximum Drain Source Voltage Vds 100V | ||
Package Type I2PAK (TO-262) | ||
Series HEXFET | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 60mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 1.6V | ||
Maximum Power Dissipation Pd 170W | ||
Maximum Gate Source Voltage Vgs ±20 V | ||
Typical Gate Charge Qg @ Vgs 150nC | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals Lead-Free | ||
Length 10.54mm | ||
Height 10.54mm | ||
Width 4.69 mm | ||
Automotive Standard No | ||
P-Channel Power MOSFET 100V to 150V, Infineon
Infineon's range of discrete HEXFET® power MOSFETs includes P-channel devices in surface mount and leaded packages and form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
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