Infineon HEXFET Type N-Channel MOSFET, 49 A, 55 V Enhancement, 3-Pin TO-220 IRFZ44NPBF

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RS-artikelnummer:
540-9777
Distrelec artikelnummer:
303-41-384
Tillv. art.nr:
IRFZ44NPBF
Tillverkare / varumärke:
Infineon
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Brand

Infineon

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

49A

Maximum Drain Source Voltage Vds

55V

Series

HEXFET

Package Type

TO-220

Mount Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance Rds

17.5mΩ

Channel Mode

Enhancement

Maximum Gate Source Voltage Vgs

20 V

Maximum Power Dissipation Pd

94W

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

63nC

Forward Voltage Vf

1.3V

Maximum Operating Temperature

175°C

Height

8.77mm

Length

10.67mm

Standards/Approvals

No

Width

4.4 mm

Distrelec Product Id

30341384

Automotive Standard

No

Infineon HEXFET Series MOSFET, 49A Maximum Continuous Drain Current, 94W Maximum Power Dissipation - IRFZ44NPBF


This MOSFET is designed for performance in automation, electronics, and electrical engineering applications. It can manage high current levels with low resistance, enhancing the efficiency of electronic circuits. With HEXFET technology, the device offers improved reliability and effectiveness in various environments.

Features & Benefits


• Utilises enhancement mode for responsive control

• Low resistance of 17.5mΩ for effective power management

• Fast switching speeds for improved system performance

Applications


• Suitable for DC-DC converters

• Motor drives and control systems

• Renewable energy systems, such as solar inverters

What impact does the low resistance have on performance?


The low on-resistance of 17.5mΩ enhances efficiency by minimising energy losses during operation, which is advantageous in high-current circuits.

How does temperature affect the continuous drain current?


Continuous drain current is rated at 49A at 25°C and decreases to 35A at 100°C, ensuring safe usage in varying environments.

Can this component handle repetitive avalanche conditions?


Yes, it is designed to withstand repetitive avalanche conditions with an avalanche current rating of up to 25A and an avalanche energy of 9.4mJ, providing additional durability.

What type of applications benefit most from using this MOSFET?


This component is particularly useful in high-power applications, including industrial automation controls and automotive systems requiring efficient energy conversion.

Is it compatible with standard PCB designs?


Yes, its TO-220AB package is widely used in various PCB layouts, allowing for straightforward integration into existing designs.

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