Infineon IPW MOSFET, 13 A, 650 V, 3-Pin PG-TO-247
- RS-artikelnummer:
- 273-7473
- Tillv. art.nr:
- IPW60R105CFD7XKSA1
- Tillverkare / varumärke:
- Infineon
Mängdrabatt möjlig
Antal (1 enhet)*
52,37 kr
(exkl. moms)
65,46 kr
(inkl. moms)
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Enheter | Per enhet |
|---|---|
| 1 - 4 | 52,37 kr |
| 5 - 9 | 51,30 kr |
| 10 - 99 | 47,38 kr |
| 100 - 249 | 43,46 kr |
| 250 + | 40,21 kr |
*vägledande pris
- RS-artikelnummer:
- 273-7473
- Tillv. art.nr:
- IPW60R105CFD7XKSA1
- Tillverkare / varumärke:
- Infineon
Specifikationer
Datablad
Lagstiftning och ursprungsland
Produktdetaljer
Hitta liknande produkter genom att välja ett eller flera attribut.
Välj alla | Attribut | Värde |
|---|---|---|
| Brand | Infineon | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 13A | |
| Maximum Drain Source Voltage Vds | 650V | |
| Package Type | PG-TO-247 | |
| Series | IPW | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 105mΩ | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 106W | |
| Forward Voltage Vf | 1V | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 42nC | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | RoHS, JEDEC47/20/22 | |
| Automotive Standard | No | |
| Välj alla | ||
|---|---|---|
Brand Infineon | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 13A | ||
Maximum Drain Source Voltage Vds 650V | ||
Package Type PG-TO-247 | ||
Series IPW | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 105mΩ | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 106W | ||
Forward Voltage Vf 1V | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 42nC | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals RoHS, JEDEC47/20/22 | ||
Automotive Standard No | ||
The Infineon MOSFET has highest efficiency with outstanding ease of use. This MOSFET has an excellent hard commutation ruggedness and highest reliability for resonant topologies. It is suitable for soft switching topologies.
Low gate charge
Ultra fast body diode
Best in class reverse recovery charge
Enabling increased power density solution
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