Infineon IPW MOSFET, 13 A, 650 V, 3-Pin PG-TO-247 IPW60R105CFD7XKSA1
- RS-artikelnummer:
- 273-7472
- Tillv. art.nr:
- IPW60R105CFD7XKSA1
- Tillverkare / varumärke:
- Infineon
Mängdrabatt möjlig
Antal (1 rör med 30 enheter)*
1 265,25 kr
(exkl. moms)
1 581,57 kr
(inkl. moms)
GRATIS leverans för online beställningar över 500,00 kr
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- 240 enhet(er) är redo att levereras
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Enheter | Per enhet | Per Rør* |
|---|---|---|
| 30 - 90 | 42,175 kr | 1 265,25 kr |
| 120 + | 38,674 kr | 1 160,22 kr |
*vägledande pris
- RS-artikelnummer:
- 273-7472
- Tillv. art.nr:
- IPW60R105CFD7XKSA1
- Tillverkare / varumärke:
- Infineon
Specifikationer
Datablad
Lagstiftning och ursprungsland
Produktdetaljer
Hitta liknande produkter genom att välja ett eller flera attribut.
Välj alla | Attribut | Värde |
|---|---|---|
| Brand | Infineon | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 13A | |
| Maximum Drain Source Voltage Vds | 650V | |
| Series | IPW | |
| Package Type | PG-TO-247 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 105mΩ | |
| Maximum Power Dissipation Pd | 106W | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Typical Gate Charge Qg @ Vgs | 42nC | |
| Forward Voltage Vf | 1V | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | RoHS, JEDEC47/20/22 | |
| Automotive Standard | No | |
| Välj alla | ||
|---|---|---|
Brand Infineon | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 13A | ||
Maximum Drain Source Voltage Vds 650V | ||
Series IPW | ||
Package Type PG-TO-247 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 105mΩ | ||
Maximum Power Dissipation Pd 106W | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Typical Gate Charge Qg @ Vgs 42nC | ||
Forward Voltage Vf 1V | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals RoHS, JEDEC47/20/22 | ||
Automotive Standard No | ||
The Infineon MOSFET has highest efficiency with outstanding ease of use. This MOSFET has an excellent hard commutation ruggedness and highest reliability for resonant topologies. It is suitable for soft switching topologies.
Low gate charge
Ultra fast body diode
Best in class reverse recovery charge
Enabling increased power density solution
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