Infineon IPW Type N-Channel MOSFET, 24 A, 650 V Enhancement, 3-Pin PG-TO-247
- RS-artikelnummer:
- 273-3026
- Tillv. art.nr:
- IPW65R099CFD7AXKSA1
- Tillverkare / varumärke:
- Infineon
Mängdrabatt möjlig
Antal (1 enhet)*
68,32 kr
(exkl. moms)
85,40 kr
(inkl. moms)
GRATIS leverans för online beställningar över 500,00 kr
I lager
- 238 enhet(er) är redo att levereras
Behöver du mer? Ange den kvantitet du behöver och klicka på "Kontrollera leveransdatum"
Enheter | Per enhet |
|---|---|
| 1 - 4 | 68,32 kr |
| 5 - 9 | 66,75 kr |
| 10 - 24 | 61,94 kr |
| 25 - 49 | 56,90 kr |
| 50 + | 52,53 kr |
*vägledande pris
- RS-artikelnummer:
- 273-3026
- Tillv. art.nr:
- IPW65R099CFD7AXKSA1
- Tillverkare / varumärke:
- Infineon
Specifikationer
Datablad
Lagstiftning och ursprungsland
Produktdetaljer
Hitta liknande produkter genom att välja ett eller flera attribut.
Välj alla | Attribut | Värde |
|---|---|---|
| Brand | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 24A | |
| Maximum Drain Source Voltage Vds | 650V | |
| Series | IPW | |
| Package Type | PG-TO-247 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 99mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -40°C | |
| Typical Gate Charge Qg @ Vgs | 53nC | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 127W | |
| Forward Voltage Vf | 1.1V | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | RoHS, AECQ101 | |
| Automotive Standard | AEC-Q101 | |
| Välj alla | ||
|---|---|---|
Brand Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 24A | ||
Maximum Drain Source Voltage Vds 650V | ||
Series IPW | ||
Package Type PG-TO-247 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 99mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -40°C | ||
Typical Gate Charge Qg @ Vgs 53nC | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 127W | ||
Forward Voltage Vf 1.1V | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals RoHS, AECQ101 | ||
Automotive Standard AEC-Q101 | ||
The Infineon 650V cool MOS N-channel automotive SJ power MOSFET in TO-247 package. It has highest reliability in the field meeting automotive lifetime requirements.
Enabling of higher power density designs
Granular portfolio available
relaterade länkar
- Infineon IPW Type N-Channel MOSFET 650 V Enhancement, 3-Pin PG-TO-247 IPW65R099CFD7AXKSA1
- Infineon IPW Type N-Channel MOSFET 650 V Enhancement, 3-Pin PG-TO-247
- Infineon IPW Type N-Channel MOSFET 650 V Enhancement, 3-Pin PG-TO-247 IPW65R115CFD7AXKSA1
- Infineon IPW MOSFET 650 V PG-TO-247
- Infineon IPW MOSFET 650 V PG-TO-247 IPW65R050CFD7AXKSA1
- Infineon IPW MOSFET 650 V, 3-Pin PG-TO-247
- Infineon IPW Type N-Channel MOSFET 650 V, 3-Pin PG-TO-247
- Infineon IPW MOSFET 650 V, 3-Pin PG-TO-247 IPW60R105CFD7XKSA1