Infineon IPW Type N-Channel MOSFET, 69 A, 650 V, 3-Pin PG-TO-247 IPW65R029CFD7XKSA1
- RS-artikelnummer:
- 258-3911
- Tillv. art.nr:
- IPW65R029CFD7XKSA1
- Tillverkare / varumärke:
- Infineon
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Antal (1 enhet)*
102,44 kr
(exkl. moms)
128,05 kr
(inkl. moms)
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Enheter | Per enhet |
|---|---|
| 1 - 4 | 102,44 kr |
| 5 - 9 | 97,22 kr |
| 10 - 24 | 95,31 kr |
| 25 - 49 | 89,26 kr |
| 50 + | 82,88 kr |
*vägledande pris
- RS-artikelnummer:
- 258-3911
- Tillv. art.nr:
- IPW65R029CFD7XKSA1
- Tillverkare / varumärke:
- Infineon
Specifikationer
Datablad
Lagstiftning och ursprungsland
Produktdetaljer
Hitta liknande produkter genom att välja ett eller flera attribut.
Välj alla | Attribut | Värde |
|---|---|---|
| Brand | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 69A | |
| Maximum Drain Source Voltage Vds | 650V | |
| Series | IPW | |
| Package Type | PG-TO-247 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 29mΩ | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 145nC | |
| Forward Voltage Vf | 1V | |
| Maximum Gate Source Voltage Vgs | 30 V | |
| Maximum Power Dissipation Pd | 305W | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| Välj alla | ||
|---|---|---|
Brand Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 69A | ||
Maximum Drain Source Voltage Vds 650V | ||
Series IPW | ||
Package Type PG-TO-247 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 29mΩ | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 145nC | ||
Forward Voltage Vf 1V | ||
Maximum Gate Source Voltage Vgs 30 V | ||
Maximum Power Dissipation Pd 305W | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
The Infineon 650V CoolMOS CFD7 super junction MOSFET in TO-247 package is ideally suited for resonant topologies in industrial applications, such as server, telecom, solar, and EV-charging stations, in which it enables significant efficiency improvements compared to competition. As a successor to the CFD2 SJ MOSFET family, it comes with reduced gate charge, improved turn-off behaviour, and reduced reverse recovery charge enabling highest efficiency and power density as well as additional 50V breakdown voltage.
650V breakdown voltage
Significantly reduced switching losses compared to competition
Lowest RDS(on) dependency over temperature
Excellent hard-commutation ruggedness
Extra safety margin for designs with increased bus voltage
Enabling increased power density
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- Infineon IPW Type N-Channel MOSFET 650 V Enhancement, 3-Pin PG-TO-247
- Infineon IPW Type N-Channel MOSFET 650 V Enhancement, 3-Pin PG-TO-247 IPW65R099CFD7AXKSA1