Infineon IPT Type N-Channel MOSFET, 313 A, 60 V Enhancement, 8-Pin PG-HSOF-8 IPT012N06NATMA1

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69 852,00 kr

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87 316,00 kr

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RS-artikelnummer:
273-5351
Tillv. art.nr:
IPT012N06NATMA1
Tillverkare / varumärke:
Infineon
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Brand

Infineon

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

313A

Maximum Drain Source Voltage Vds

60V

Package Type

PG-HSOF-8

Series

IPT

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

1.2mΩ

Channel Mode

Enhancement

Minimum Operating Temperature

-55°C

Forward Voltage Vf

1.2V

Typical Gate Charge Qg @ Vgs

106nC

Maximum Power Dissipation Pd

214W

Maximum Gate Source Voltage Vgs

20 V

Maximum Operating Temperature

175°C

Standards/Approvals

IEC61249-2-21, JEDEC1, RoHS

Automotive Standard

No

The Infineon Power MOSFET is optimized for high current applications such as forklift, light electric vehicles, POL and telecom. This package is a perfect solution for high power applications where highest efficiency, outstanding EMI behaviour as well as best thermal behaviour and space reduction are required. It is qualified according to JEDEC1 for target applications.

Halogen free

RoHS compliant

Pb free lead plating

Superior thermal resistance

100 percent avalanche tested

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