Infineon IPT Type N-Channel MOSFET, 18 A, 600 V Enhancement, 8-Pin PG-HSOF-8 IPT60R180CM8XTMA1
- RS-artikelnummer:
- 349-259
- Tillv. art.nr:
- IPT60R180CM8XTMA1
- Tillverkare / varumärke:
- Infineon
Mängdrabatt möjlig
Antal (1 förpackning med 5 enheter)*
113,40 kr
(exkl. moms)
141,75 kr
(inkl. moms)
GRATIS leverans för online beställningar över 500,00 kr
I lager
- Dessutom levereras 2 000 enhet(er) från den 29 december 2025
Behöver du mer? Ange den kvantitet du behöver och klicka på "Kontrollera leveransdatum"
Enheter | Per enhet | Per förpackning* |
|---|---|---|
| 5 - 45 | 22,68 kr | 113,40 kr |
| 50 - 95 | 21,548 kr | 107,74 kr |
| 100 - 495 | 19,958 kr | 99,79 kr |
| 500 - 995 | 18,368 kr | 91,84 kr |
| 1000 + | 17,696 kr | 88,48 kr |
*vägledande pris
- RS-artikelnummer:
- 349-259
- Tillv. art.nr:
- IPT60R180CM8XTMA1
- Tillverkare / varumärke:
- Infineon
Specifikationer
Datablad
Lagstiftning och ursprungsland
Produktdetaljer
Hitta liknande produkter genom att välja ett eller flera attribut.
Välj alla | Attribut | Värde |
|---|---|---|
| Brand | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 18A | |
| Maximum Drain Source Voltage Vds | 600V | |
| Series | IPT | |
| Package Type | PG-HSOF-8 | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 180mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 17nC | |
| Maximum Power Dissipation Pd | 119W | |
| Forward Voltage Vf | 0.9V | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | JEDEC, RoHS | |
| Automotive Standard | No | |
| Välj alla | ||
|---|---|---|
Brand Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 18A | ||
Maximum Drain Source Voltage Vds 600V | ||
Series IPT | ||
Package Type PG-HSOF-8 | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 180mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 17nC | ||
Maximum Power Dissipation Pd 119W | ||
Forward Voltage Vf 0.9V | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals JEDEC, RoHS | ||
Automotive Standard No | ||
- COO (Country of Origin):
- MY
The Infineon CoolMOS 8th generation platform is a revolutionary technology for high voltage power MOSFETs, designed according to the super junction(SJ) principle and pioneered by Infineon Technologies. The 600V CoolMOS CM8 series is the successor to the CoolMOS 7. It combines the benefits of a fast switching SJ MOSFET with excellent ease of use, e.g low ringing tendency, implemented fast body diode for all products with outstanding robustness against hard commutation and excellent ESD capability. Furthermore, extremely low switching and conduction losses of CM8, make switching applications even more efficient.
Suitable for hard and soft switching topologies
Ease of use and fast design in through low ringing tendency
Simplified thermal management thanks to our advanced die attach technique
Suitable for a wide variety of applications and power ranges
Increased power density solutions enabled by using products with smaller footprint
relaterade länkar
- Infineon IPT Type N-Channel MOSFET 600 V Enhancement, 8-Pin PG-HSOF-8 IPT60T065S7XTMA1
- Infineon IPT Type N-Channel MOSFET 600 V Enhancement, 8-Pin PG-HSOF-8 IPT60T022S7XTMA1
- Infineon IPT Type N-Channel MOSFET 600 V Enhancement, 8-Pin PG-HSOF-8 IPT60T040S7XTMA1
- Infineon IPT Type N-Channel Power MOSFET 600 V Enhancement, 8-Pin PG-HSOF-8 IPT60R016CM8XTMA1
- Infineon IPT Type N-Channel Power Transistor 600 V Enhancement, 8-Pin PG-HSOF-8 IPT60R037CM8XTMA1
- Infineon IPT Type N-Channel MOSFET 80 V Enhancement, 8-Pin PG-HSOF-8
- Infineon IPT Type N-Channel MOSFET 60 V Enhancement, 8-Pin PG-HSOF-8
- Infineon IPT Type N-Channel MOSFET 80 V Enhancement, 8-Pin PG-HSOF-8 IPT014N08NM5ATMA1