Infineon OptiMOSa5 Type N-Channel MOSFET, 112 A, 150 V Enhancement, 3-Pin PG-TO262-3 IPI076N15N5AKSA1

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1 618,75 kr

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2 023,45 kr

(inkl. moms)

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50 +32,375 kr1 618,75 kr

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RS-artikelnummer:
273-3013
Tillv. art.nr:
IPI076N15N5AKSA1
Tillverkare / varumärke:
Infineon
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Brand

Infineon

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

112A

Maximum Drain Source Voltage Vds

150V

Series

OptiMOSa5

Package Type

PG-TO262-3

Mount Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance Rds

7.6mΩ

Channel Mode

Enhancement

Forward Voltage Vf

1.1V

Maximum Power Dissipation Pd

214W

Typical Gate Charge Qg @ Vgs

61nC

Minimum Operating Temperature

-55°C

Maximum Gate Source Voltage Vgs

20 V

Maximum Operating Temperature

175°C

Standards/Approvals

JEDECforIndustrialApplications, IEC61249-2-21, RoHS

Automotive Standard

No

The Infineon power MOSFETs are particularly suitable for low voltage drives such as forklift and e-scooter, as well as telecom and solar applications.

Higher power density designs

More rugged products

System cost reduction

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