Infineon OptiMOS Type N-Channel MOSFET, 77 A, 150 V Enhancement, 8-Pin PG-WSON-8 BSC110N15NS5SCATMA1

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RS-artikelnummer:
284-648
Tillv. art.nr:
BSC110N15NS5SCATMA1
Tillverkare / varumärke:
Infineon
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Brand

Infineon

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

77A

Maximum Drain Source Voltage Vds

150V

Series

OptiMOS

Package Type

PG-WSON-8

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

11mΩ

Channel Mode

Enhancement

Maximum Power Dissipation Pd

150W

Maximum Gate Source Voltage Vgs

±20 V

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

175°C

Standards/Approvals

RoHS Compliant

Automotive Standard

No

The Infineon OptiMOS Power MOSFET stands as a Pinnacle of performance in the realm of MOSFET technology. Designed for demanding industrial applications, it offers superior efficiency and reliability, making it an Ideal choice for high frequency switching and synchronous rectification. With innovative dual side cooling and an operating temperature capability of up to 175°C, this device ensures robust operation even under significant thermal stress. The infusion of Advanced materials further enhances its thermal stability and reliability, ensuring that it meets the strictest industry standards. With its comprehensive validation to JEDEC standards, this MOSFET is tailored for engineers seeking excellence in power electronics.

Exceptional thermal resistance for reliability

N channel design for versatile switching

Streamlined package for space efficiency

Qualified for industrial applications' performance

Optimised for high frequency technology designs

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