Infineon IPD Type N-Channel MOSFET, 50 A, 60 V Enhancement, 3-Pin TO-252 IPD079N06L3GATMA1

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11 225,00 kr

(exkl. moms)

14 025,00 kr

(inkl. moms)

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2500 +4,49 kr11 225,00 kr

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RS-artikelnummer:
273-3003
Tillv. art.nr:
IPD079N06L3GATMA1
Tillverkare / varumärke:
Infineon
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Brand

Infineon

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

50A

Maximum Drain Source Voltage Vds

60V

Series

IPD

Package Type

TO-252

Mount Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance Rds

7.9mΩ

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

50nC

Minimum Operating Temperature

-55°C

Maximum Gate Source Voltage Vgs

±20 V

Maximum Operating Temperature

175°C

Standards/Approvals

RoHS

Length

10.48mm

Width

6.731 mm

Height

6.223mm

Automotive Standard

No

The Infineon power MOSFET is a perfect choice for synchronous rectification in switched mode power supplies such as those found in servers and desktops and tablet charger. In addition these devices can be used for a broad range of industrial applications

Highest system efficiency

Less paralleling required

Increased power density

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