Infineon IPB057N06N Type N-Channel MOSFET, 45 A, 60 V Enhancement, 3-Pin PG-TO263-3
- RS-artikelnummer:
- 273-2998
- Tillv. art.nr:
- IPB057N06NATMA1
- Tillverkare / varumärke:
- Infineon
Mängdrabatt möjlig
Antal (1 förpackning med 5 enheter)*
69,56 kr
(exkl. moms)
86,95 kr
(inkl. moms)
GRATIS leverans för online beställningar över 500,00 kr
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- 950 enhet(er) är redo att levereras
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Enheter | Per enhet | Per förpackning* |
|---|---|---|
| 5 - 45 | 13,912 kr | 69,56 kr |
| 50 - 95 | 12,924 kr | 64,62 kr |
| 100 - 245 | 11,402 kr | 57,01 kr |
| 250 - 495 | 10,998 kr | 54,99 kr |
| 500 + | 9,70 kr | 48,50 kr |
*vägledande pris
- RS-artikelnummer:
- 273-2998
- Tillv. art.nr:
- IPB057N06NATMA1
- Tillverkare / varumärke:
- Infineon
Specifikationer
Datablad
Lagstiftning och ursprungsland
Produktdetaljer
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Välj alla | Attribut | Värde |
|---|---|---|
| Brand | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 45A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Series | IPB057N06N | |
| Package Type | PG-TO263-3 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 5.7mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -5°C | |
| Forward Voltage Vf | 1V | |
| Typical Gate Charge Qg @ Vgs | 27nC | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 83W | |
| Maximum Operating Temperature | 175°C | |
| Width | 40 mm | |
| Standards/Approvals | JEDEC 1, IEC61249-2-21 | |
| Length | 40mm | |
| Height | 1.5mm | |
| Automotive Standard | No | |
| Välj alla | ||
|---|---|---|
Brand Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 45A | ||
Maximum Drain Source Voltage Vds 60V | ||
Series IPB057N06N | ||
Package Type PG-TO263-3 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 5.7mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -5°C | ||
Forward Voltage Vf 1V | ||
Typical Gate Charge Qg @ Vgs 27nC | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 83W | ||
Maximum Operating Temperature 175°C | ||
Width 40 mm | ||
Standards/Approvals JEDEC 1, IEC61249-2-21 | ||
Length 40mm | ||
Height 1.5mm | ||
Automotive Standard No | ||
The Infineon power MOSFET is optimized for synchronous rectification in switched mode power supplies (SMPS) such as those found in servers and desktops and tablet charger. In addition these devices are a perfect choice for a broad range of industrial appl
Highest system efficiency
Less paralleling required
Increased power density
System cost reduction
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