Infineon OptiMOS-TM6 Type N-Channel MOSFET, 134 A, 200 V Enhancement, 3-Pin PG-TO263-3 IPB068N20NM6ATMA1
- RS-artikelnummer:
- 349-400
- Tillv. art.nr:
- IPB068N20NM6ATMA1
- Tillverkare / varumärke:
- Infineon
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97,71 kr
(exkl. moms)
122,14 kr
(inkl. moms)
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Enheter | Per enhet |
|---|---|
| 1 - 9 | 97,71 kr |
| 10 - 99 | 87,92 kr |
| 100 - 499 | 81,09 kr |
| 500 - 999 | 75,38 kr |
| 1000 + | 67,42 kr |
*vägledande pris
- RS-artikelnummer:
- 349-400
- Tillv. art.nr:
- IPB068N20NM6ATMA1
- Tillverkare / varumärke:
- Infineon
Specifikationer
Datablad
Lagstiftning och ursprungsland
Produktdetaljer
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Välj alla | Attribut | Värde |
|---|---|---|
| Brand | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 134A | |
| Maximum Drain Source Voltage Vds | 200V | |
| Series | OptiMOS-TM6 | |
| Package Type | PG-TO263-3 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 6.8mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 300W | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Typical Gate Charge Qg @ Vgs | 73nC | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS, DIN IEC 68-1: 55/175/56, IEC61249-2-21 | |
| Automotive Standard | No | |
| Välj alla | ||
|---|---|---|
Brand Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 134A | ||
Maximum Drain Source Voltage Vds 200V | ||
Series OptiMOS-TM6 | ||
Package Type PG-TO263-3 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 6.8mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 300W | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Typical Gate Charge Qg @ Vgs 73nC | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS, DIN IEC 68-1: 55/175/56, IEC61249-2-21 | ||
Automotive Standard No | ||
- COO (Country of Origin):
- MY
The Infineon OptiMOS 6 Power Transistor, 200 V is an N-channel, normal level MOSFET designed for high efficiency power applications. It offers very low on resistance (RDS(on)), ensuring minimal conduction losses. With an excellent gate charge x RDS(on) product (FOM), it delivers superior switching performance. This MOSFET also features very low reverse recovery charge (Qrr), enhancing overall efficiency.
Pb free lead plating
RoHS compliant
Halogen free according to IEC61249-2-21
MSL 1 classified according to J-STD-020
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