Infineon IPB057N06N Type N-Channel MOSFET, 45 A, 60 V Enhancement, 3-Pin PG-TO263-3 IPB057N06NATMA1

Se alla MOSFETs

Antal (1 rulle med 1000 enheter)*

5 903,00 kr

(exkl. moms)

7 379,00 kr

(inkl. moms)

Add to Basket
välj eller skriv kvantitet
Tillfälligt slut
  • Leverans från den 26 maj 2026
Behöver du mer? Ange den kvantitet du behöver och klicka på "Kontrollera leveransdatum"
Enheter
Per enhet
Per rulle*
1000 +5,903 kr5 903,00 kr

*vägledande pris

RS-artikelnummer:
273-2997
Tillv. art.nr:
IPB057N06NATMA1
Tillverkare / varumärke:
Infineon
Hitta liknande produkter genom att välja ett eller flera attribut.
Välj alla

Brand

Infineon

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

45A

Maximum Drain Source Voltage Vds

60V

Package Type

PG-TO263-3

Series

IPB057N06N

Mount Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance Rds

5.7mΩ

Channel Mode

Enhancement

Forward Voltage Vf

1V

Minimum Operating Temperature

-5°C

Typical Gate Charge Qg @ Vgs

27nC

Maximum Power Dissipation Pd

83W

Maximum Gate Source Voltage Vgs

20 V

Maximum Operating Temperature

175°C

Length

40mm

Standards/Approvals

JEDEC 1, IEC61249-2-21

Height

1.5mm

Width

40 mm

Automotive Standard

No

The Infineon power MOSFET is optimized for synchronous rectification in switched mode power supplies (SMPS) such as those found in servers and desktops and tablet charger. In addition these devices are a perfect choice for a broad range of industrial appl

Highest system efficiency

Less paralleling required

Increased power density

System cost reduction

relaterade länkar