Infineon OptiMOS Type N-Channel MOSFET, 45 A, 650 V Enhancement, 3-Pin PG-TO263-3 IPB65R050CFD7AATMA1

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65 972,00 kr

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82 465,00 kr

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RS-artikelnummer:
273-2775
Tillv. art.nr:
IPB65R050CFD7AATMA1
Tillverkare / varumärke:
Infineon
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Brand

Infineon

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

45A

Maximum Drain Source Voltage Vds

650V

Series

OptiMOS

Package Type

PG-TO263-3

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

0.05Ω

Channel Mode

Enhancement

Maximum Power Dissipation Pd

227W

Typical Gate Charge Qg @ Vgs

102nC

Minimum Operating Temperature

-55°C

Maximum Gate Source Voltage Vgs

20 V

Maximum Operating Temperature

150°C

Standards/Approvals

RoHS

Automotive Standard

AEC-Q101

The Infineon MOSFET is a 650V CoolMOS CFD7A power device, It is a Infineon latest generation of market leading automotive qualified high voltage CoolMOS MOSFETs. In addition to the well known attributes of high quality and reliability required by the automotive industry, the new CoolMOS CFD7A series provides for an integrated fast body diode and can be used for PFC and resonant switching topologies like the ZVS phase shift full bridge and LLC.

Lower switching losses

High quality and reliability

100 percent avalanche tested

Optimized for higher battery voltages

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