Infineon IPT Type N-Channel MOSFET, 331 A, 80 V Enhancement, 8-Pin PG-HSOF-8 IPT014N08NM5ATMA1
- RS-artikelnummer:
- 273-2792
- Tillv. art.nr:
- IPT014N08NM5ATMA1
- Tillverkare / varumärke:
- Infineon
Mängdrabatt möjlig
Antal (1 enhet)*
66,56 kr
(exkl. moms)
83,20 kr
(inkl. moms)
GRATIS leverans för online beställningar över 500,00 kr
I lager
- Dessutom levereras 100 enhet(er) från den 29 december 2025
Behöver du mer? Ange den kvantitet du behöver och klicka på "Kontrollera leveransdatum"
Enheter | Per enhet |
|---|---|
| 1 - 49 | 66,56 kr |
| 50 - 99 | 60,48 kr |
| 100 - 249 | 55,33 kr |
| 250 - 999 | 51,07 kr |
| 1000 + | 47,49 kr |
*vägledande pris
- RS-artikelnummer:
- 273-2792
- Tillv. art.nr:
- IPT014N08NM5ATMA1
- Tillverkare / varumärke:
- Infineon
Specifikationer
Datablad
Lagstiftning och ursprungsland
Produktdetaljer
Hitta liknande produkter genom att välja ett eller flera attribut.
Välj alla | Attribut | Värde |
|---|---|---|
| Brand | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 331A | |
| Maximum Drain Source Voltage Vds | 80V | |
| Series | IPT | |
| Package Type | PG-HSOF-8 | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 1.4mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 300W | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 10 V | |
| Typical Gate Charge Qg @ Vgs | 160nC | |
| Forward Voltage Vf | 1.2V | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | IEC61249-2-21, RoHS, JEDEC | |
| Automotive Standard | No | |
| Välj alla | ||
|---|---|---|
Brand Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 331A | ||
Maximum Drain Source Voltage Vds 80V | ||
Series IPT | ||
Package Type PG-HSOF-8 | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 1.4mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 300W | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 10 V | ||
Typical Gate Charge Qg @ Vgs 160nC | ||
Forward Voltage Vf 1.2V | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals IEC61249-2-21, RoHS, JEDEC | ||
Automotive Standard No | ||
- COO (Country of Origin):
- MY
The Infineon MOSFET is a N channel 80 V MOSFET and optimized for battery powered applications. It is qualified according to JEDEC for target applications. This MOSFET is fully qualified according to JEDEC for industrial applications and halogen free according to IEC61249 2 21.
RoHS compliant
Pb free lead plating
Excellent gate charge
Very low on resistance
100 percent avalanche tested
relaterade länkar
- Infineon IPT Type N-Channel MOSFET 80 V Enhancement, 8-Pin PG-HSOF-8 IPT014N08NM5ATMA1
- Infineon IPT Type N-Channel MOSFET 80 V Enhancement, 8-Pin PG-HSOF-8
- Infineon IPT Type N-Channel MOSFET 80 V Enhancement, 8-Pin PG-HSOF-8 IPT029N08N5ATMA1
- Infineon IPT Type N-Channel MOSFET 600 V Enhancement, 8-Pin PG-HSOF-8 IPT60T065S7XTMA1
- Infineon IPT Type N-Channel MOSFET 60 V Enhancement, 8-Pin PG-HSOF-8
- Infineon OptiMOS Type N-Channel MOSFET 120 V Enhancement, 8-Pin PG-HSOF-8 IPT017N12NM6ATMA1
- Infineon IPT Type N-Channel MOSFET 60 V Enhancement, 8-Pin PG-HSOF-8 IPT012N06NATMA1
- Infineon IPT Type N-Channel MOSFET 600 V Enhancement, 8-Pin PG-HSOF-8 IPT60T022S7XTMA1