Vishay SIS9634LDN 4 Dual N-Channel MOSFET, 6 A, 60 V Enhancement, 8-Pin PowerPAK 1212-8 SIS9634LDN-T1-GE3
- RS-artikelnummer:
- 268-8345
- Tillv. art.nr:
- SIS9634LDN-T1-GE3
- Tillverkare / varumärke:
- Vishay
Mängdrabatt möjlig
Antal (1 förpackning med 5 enheter)*
57,12 kr
(exkl. moms)
71,40 kr
(inkl. moms)
GRATIS leverans för online beställningar över 500,00 kr
Håller på att utgå
- Slutlig(a) 6 010 enhet(er), redo att levereras
Enheter | Per enhet | Per förpackning* |
|---|---|---|
| 5 - 45 | 11,424 kr | 57,12 kr |
| 50 - 95 | 10,236 kr | 51,18 kr |
| 100 - 245 | 7,952 kr | 39,76 kr |
| 250 - 995 | 7,818 kr | 39,09 kr |
| 1000 + | 5,398 kr | 26,99 kr |
*vägledande pris
- RS-artikelnummer:
- 268-8345
- Tillv. art.nr:
- SIS9634LDN-T1-GE3
- Tillverkare / varumärke:
- Vishay
Specifikationer
Datablad
Lagstiftning och ursprungsland
Produktdetaljer
Hitta liknande produkter genom att välja ett eller flera attribut.
Välj alla | Attribut | Värde |
|---|---|---|
| Brand | Vishay | |
| Product Type | MOSFET | |
| Channel Type | Dual N | |
| Maximum Continuous Drain Current Id | 6A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Series | SIS9634LDN | |
| Package Type | PowerPAK 1212-8 | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 60 V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | RoHS, UIS tested 100 percent | |
| Number of Elements per Chip | 4 | |
| Automotive Standard | No | |
| Välj alla | ||
|---|---|---|
Brand Vishay | ||
Product Type MOSFET | ||
Channel Type Dual N | ||
Maximum Continuous Drain Current Id 6A | ||
Maximum Drain Source Voltage Vds 60V | ||
Series SIS9634LDN | ||
Package Type PowerPAK 1212-8 | ||
Mount Type Surface | ||
Pin Count 8 | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 60 V | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals RoHS, UIS tested 100 percent | ||
Number of Elements per Chip 4 | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
The Vishay dual N channel TrenchFET 4 generation power MOSFET that is fully lead pb and halogen free device. It is optimized and ratio reduces switching related power loss and it is used in applications such as synchronous rectification, motor drive contr
ROHS compliant
UIS tested 100 percent
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