Vishay Type P-Channel MOSFET, 5.7 A, 60 V Enhancement, 8-Pin PowerPAK 1212-8 SI7415DN-T1-GE3

RS-artikelnummer:: 180-7759
Tillv. art.nr:: SI7415DN-T1-GE3
Tillverkare / varumärke:: Vishay

Vishay Type P-Channel MOSFET, 5.7 A, 60 V Enhancement, 8-Pin PowerPAK 1212-8 SI7415DN-T1-GE3

Mängdrabatt möjlig

Antal (1 förpackning med 10 enheter)*

164,75 kr

(exkl. moms)

205,94 kr

(inkl. moms)

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950 enhet(er) är redo att levereras

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Enheter	Per enhet	Per förpackning*
10 - 90	16,475 kr	164,75 kr
100 - 240	14,829 kr	148,29 kr
250 - 490	13,182 kr	131,82 kr
500 - 990	12,029 kr	120,29 kr
1000 +	10,371 kr	103,71 kr

*vägledande pris

RS-artikelnummer:: 180-7759
Tillv. art.nr:: SI7415DN-T1-GE3
Tillverkare / varumärke:: Vishay

Specifikationer

Datablad

Lagstiftning och ursprungsland

Produktdetaljer

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Välj alla	Attribut	Värde
	Brand	Vishay
	Product Type	MOSFET
	Channel Type	Type P
	Maximum Continuous Drain Current Id	5.7A
	Maximum Drain Source Voltage Vds	60V
	Package Type	PowerPAK 1212-8
	Mount Type	Surface
	Pin Count	8
	Maximum Drain Source Resistance Rds	0.065Ω
	Channel Mode	Enhancement
	Minimum Operating Temperature	-55°C
	Maximum Gate Source Voltage Vgs	20 V
	Forward Voltage Vf	1.2V
	Typical Gate Charge Qg @ Vgs	25nC
	Maximum Power Dissipation Pd	3.8W
	Maximum Operating Temperature	150°C
	Standards/Approvals	IEC 61249-2-21
	Length	3.61mm
	Width	3.61 mm
	Height	1.12mm
	Automotive Standard	No

	Välj alla
	Brand Vishay
	Product Type MOSFET
	Channel Type Type P
	Maximum Continuous Drain Current Id 5.7A
	Maximum Drain Source Voltage Vds 60V
	Package Type PowerPAK 1212-8
	Mount Type Surface
	Pin Count 8
	Maximum Drain Source Resistance Rds 0.065Ω
	Channel Mode Enhancement
	Minimum Operating Temperature -55°C
	Maximum Gate Source Voltage Vgs 20 V
	Forward Voltage Vf 1.2V
	Typical Gate Charge Qg @ Vgs 25nC
	Maximum Power Dissipation Pd 3.8W
	Maximum Operating Temperature 150°C
	Standards/Approvals IEC 61249-2-21
	Length 3.61mm
	Width 3.61 mm
	Height 1.12mm
	Automotive Standard No

Datasheet

COO (Country of Origin):: CN

Vishay MOSFET

The Vishay surface mount P-channel PowerPAK-1212-8 MOSFET is a new age product with a drain-source voltage of 60V and a maximum gate-source voltage of 20V. It has a drain-source resistance of 65mohms at a gate-source voltage of 10V. It has a maximum power dissipation of 3.8W and continuous drain current of 5.7A. It has a minimum and a maximum driving voltage 4.5V and 10V respectively. This product has been optimized for lower switching and conduction losses. The MOSFET offers excellent efficiency along with a long and productive life without compromising performance or functionality.

Features and Benefits

• Fast switching

• Halogen free

• Lead (Pb) free component

• Operating temperature ranges between -55°C and 150°C

• TrenchFET power MOSFET

Applications

• Half-bridge motor drives

• High voltage non-synchronous buck converters

• Load switches

Certifications

• ANSI/ESD S20.20:2014

• BS EN 61340-5-1:2007