Vishay Si7615ADN Type P-Channel MOSFET, 35 A, 20 V Enhancement, 8-Pin PowerPAK 1212-8 SI7615ADN-T1-GE3
- RS-artikelnummer:
- 787-9248
- Tillv. art.nr:
- SI7615ADN-T1-GE3
- Tillverkare / varumärke:
- Vishay
Mängdrabatt möjlig
Antal (1 förpackning med 10 enheter)*
57,90 kr
(exkl. moms)
72,40 kr
(inkl. moms)
GRATIS leverans för online beställningar över 500,00 kr
Sista RS lager
- 20 kvar, redo att levereras
- Sista 4 350 enhet(er) levereras från den 01 januari 2026
Enheter | Per enhet | Per förpackning* |
|---|---|---|
| 10 - 90 | 5,79 kr | 57,90 kr |
| 100 - 490 | 5,219 kr | 52,19 kr |
| 500 - 990 | 4,357 kr | 43,57 kr |
| 1000 - 2490 | 4,166 kr | 41,66 kr |
| 2500 + | 3,763 kr | 37,63 kr |
*vägledande pris
- RS-artikelnummer:
- 787-9248
- Tillv. art.nr:
- SI7615ADN-T1-GE3
- Tillverkare / varumärke:
- Vishay
Specifikationer
Datablad
Lagstiftning och ursprungsland
Produktdetaljer
Hitta liknande produkter genom att välja ett eller flera attribut.
Välj alla | Attribut | Värde |
|---|---|---|
| Brand | Vishay | |
| Channel Type | Type P | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 35A | |
| Maximum Drain Source Voltage Vds | 20V | |
| Series | Si7615ADN | |
| Package Type | PowerPAK 1212-8 | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 0.0044Ω | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 52W | |
| Typical Gate Charge Qg @ Vgs | 59nC | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | -1.1V | |
| Maximum Gate Source Voltage Vgs | ±12 V | |
| Maximum Operating Temperature | 150°C | |
| Width | 3.4 mm | |
| Length | 3.4mm | |
| Standards/Approvals | Lead (Pb)-Free | |
| Height | 1.12mm | |
| Automotive Standard | No | |
| Välj alla | ||
|---|---|---|
Brand Vishay | ||
Channel Type Type P | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 35A | ||
Maximum Drain Source Voltage Vds 20V | ||
Series Si7615ADN | ||
Package Type PowerPAK 1212-8 | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 0.0044Ω | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 52W | ||
Typical Gate Charge Qg @ Vgs 59nC | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf -1.1V | ||
Maximum Gate Source Voltage Vgs ±12 V | ||
Maximum Operating Temperature 150°C | ||
Width 3.4 mm | ||
Length 3.4mm | ||
Standards/Approvals Lead (Pb)-Free | ||
Height 1.12mm | ||
Automotive Standard No | ||
P-Channel MOSFET, 8V to 20V, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
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