Vishay SIHB Type N-Channel MOSFET, 35 A, 600 V Enhancement, 3-Pin TO-263 SIHB080N60E-GE3

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Antal (1 rör med 50 enheter)*

1 886,20 kr

(exkl. moms)

2 357,75 kr

(inkl. moms)

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50 - 5037,724 kr1 886,20 kr
100 - 45030,896 kr1 544,80 kr
500 - 95028,00 kr1 400,00 kr
1000 +27,301 kr1 365,05 kr

*vägledande pris

RS-artikelnummer:
268-8289
Tillv. art.nr:
SIHB080N60E-GE3
Tillverkare / varumärke:
Vishay
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Brand

Vishay

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

35A

Maximum Drain Source Voltage Vds

600V

Series

SIHB

Package Type

TO-263

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

0.08Ω

Channel Mode

Enhancement

Forward Voltage Vf

1.2V

Maximum Power Dissipation Pd

227W

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

63nC

Maximum Gate Source Voltage Vgs

±30 V

Maximum Operating Temperature

150°C

Length

10.67mm

Standards/Approvals

RoHS

Automotive Standard

No

COO (Country of Origin):
CN
The Vishay power MOSFET with fast body diode and 4th generation E series technology has reduced switching and conduction losses and it is used in applications such as switch mode power supplies, server power supplies and power factor correction power supp

Low effective capacitance

Avalanche energy rated

Low figure of merit

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