Vishay SiHB105N60EF Type N-Channel MOSFET, 29 A, 600 V Enhancement, 3-Pin TO-263 SIHB105N60EF-GE3
- RS-artikelnummer:
- 204-7205
- Tillv. art.nr:
- SIHB105N60EF-GE3
- Tillverkare / varumärke:
- Vishay
Mängdrabatt möjlig
Antal (1 förpackning med 5 enheter)*
135,63 kr
(exkl. moms)
169,54 kr
(inkl. moms)
GRATIS leverans för online beställningar över 500,00 kr
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- Leverans från den 13 april 2026
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Enheter | Per enhet | Per förpackning* |
|---|---|---|
| 5 - 20 | 27,126 kr | 135,63 kr |
| 25 - 45 | 21,952 kr | 109,76 kr |
| 50 - 120 | 21,37 kr | 106,85 kr |
| 125 - 245 | 20,854 kr | 104,27 kr |
| 250 + | 20,316 kr | 101,58 kr |
*vägledande pris
- RS-artikelnummer:
- 204-7205
- Tillv. art.nr:
- SIHB105N60EF-GE3
- Tillverkare / varumärke:
- Vishay
Specifikationer
Datablad
Lagstiftning och ursprungsland
Produktdetaljer
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Välj alla | Attribut | Värde |
|---|---|---|
| Brand | Vishay | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 29A | |
| Maximum Drain Source Voltage Vds | 600V | |
| Series | SiHB105N60EF | |
| Package Type | TO-263 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 102mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 53nC | |
| Maximum Power Dissipation Pd | 208W | |
| Maximum Gate Source Voltage Vgs | 30 V | |
| Forward Voltage Vf | 1.2V | |
| Maximum Operating Temperature | 150°C | |
| Height | 15.88mm | |
| Width | 4.83 mm | |
| Length | 10.67mm | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Välj alla | ||
|---|---|---|
Brand Vishay | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 29A | ||
Maximum Drain Source Voltage Vds 600V | ||
Series SiHB105N60EF | ||
Package Type TO-263 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 102mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 53nC | ||
Maximum Power Dissipation Pd 208W | ||
Maximum Gate Source Voltage Vgs 30 V | ||
Forward Voltage Vf 1.2V | ||
Maximum Operating Temperature 150°C | ||
Height 15.88mm | ||
Width 4.83 mm | ||
Length 10.67mm | ||
Standards/Approvals No | ||
Automotive Standard No | ||
The Vishay EF Series Power MOSFET With Fast Body Diode has a 4th generation E series technology. It has reduced switching and conduction losses.
Low figure-of-merit (FOM) Ron x Qg
Low effective capacitance (Co(er)
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