Vishay SIHB Type N-Channel MOSFET, 5 A, 850 V Enhancement, 3-Pin TO-263 SIHB6N80AE-GE3

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95,09 kr

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118,86 kr

(inkl. moms)

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5 - 519,018 kr95,09 kr
10 - 2017,114 kr85,57 kr
25 - 9516,80 kr84,00 kr
100 - 49513,754 kr68,77 kr
500 +11,29 kr56,45 kr

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Förpackningsalternativ:
RS-artikelnummer:
268-8295
Tillv. art.nr:
SIHB6N80AE-GE3
Tillverkare / varumärke:
Vishay
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Brand

Vishay

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

5A

Maximum Drain Source Voltage Vds

850V

Package Type

TO-263

Series

SIHB

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

0.95Ω

Channel Mode

Enhancement

Minimum Operating Temperature

-55°C

Maximum Power Dissipation Pd

62.5W

Maximum Gate Source Voltage Vgs

±30 V

Forward Voltage Vf

1.2V

Maximum Operating Temperature

150°C

Length

10.67mm

Standards/Approvals

RoHS

Automotive Standard

No

COO (Country of Origin):
CN
The Vishay E series power MOSFET has low switching and conduction losses, it is used in applications such as switch mode power supplies, server power supplies, and power factor correction power supplies. It has integrated zener diode for ESD protection.

Low effective capacitance

Avalanche energy rated

Low figure of merit

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