Infineon HEXFET Type N-Channel MOSFET, 16 A, 100 V Enhancement, 3-Pin TO-251

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13 428,00 kr

(exkl. moms)

16 785,00 kr

(inkl. moms)

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3000 +4,476 kr13 428,00 kr

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RS-artikelnummer:
262-6775
Tillv. art.nr:
IRFU3910PBF
Tillverkare / varumärke:
Infineon
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Brand

Infineon

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

16A

Maximum Drain Source Voltage Vds

100V

Package Type

TO-251

Series

HEXFET

Mount Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance Rds

115mΩ

Channel Mode

Enhancement

Maximum Gate Source Voltage Vgs

20 V

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

29.3nC

Maximum Power Dissipation Pd

52W

Forward Voltage Vf

1.3V

Maximum Operating Temperature

175°C

Standards/Approvals

RoHS

Length

6.73mm

Width

6.22 mm

Height

2.39mm

Automotive Standard

No

The Infineon power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. It has ultra low on-resistance. It provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.

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