Infineon HEXFET Type N-Channel MOSFET, 16 A, 110 V Enhancement, 3-Pin TO-252

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11 742,00 kr

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14 676,00 kr

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RS-artikelnummer:
222-4752
Tillv. art.nr:
IRFR3910TRLPBF
Tillverkare / varumärke:
Infineon
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Brand

Infineon

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

16A

Maximum Drain Source Voltage Vds

110V

Package Type

TO-252

Series

HEXFET

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

0.12mΩ

Channel Mode

Enhancement

Maximum Power Dissipation Pd

79W

Maximum Gate Source Voltage Vgs

20 V

Typical Gate Charge Qg @ Vgs

44nC

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

175°C

Standards/Approvals

No

Length

6.73mm

Height

6.22mm

Width

2.39 mm

Automotive Standard

No

The Infineon design of HEXFET® Power MOSFETs from international rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.

Advanced Process Technology

Dynamic dv/dt Rating

Fast Switching

Fully Avalanche Rated

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