Infineon HEXFET Type N-Channel MOSFET, 61 A, 55 V TO-252

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9 344,00 kr

(exkl. moms)

11 680,00 kr

(inkl. moms)

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2000 +4,672 kr9 344,00 kr

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RS-artikelnummer:
258-3998
Tillv. art.nr:
IRLR3915TRPBF
Tillverkare / varumärke:
Infineon
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Brand

Infineon

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

61A

Maximum Drain Source Voltage Vds

55V

Package Type

TO-252

Series

HEXFET

Mount Type

Surface

Maximum Drain Source Resistance Rds

17mΩ

Typical Gate Charge Qg @ Vgs

61nC

Maximum Power Dissipation Pd

120W

Minimum Operating Temperature

-55°C

Maximum Gate Source Voltage Vgs

16 V

Forward Voltage Vf

1.3V

Maximum Operating Temperature

175°C

Standards/Approvals

RoHS

Automotive Standard

No

The Infineon HEXFET power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this product are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable device for use in a wide variety of applications.

Advanced Process Technology

Ultra Low On-Resistance

Fast Switching

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