Infineon HEXFET Type N-Channel MOSFET, 3.2 A, 100 V PQFN

Se alla MOSFETs

Antal (1 rulle med 4000 enheter)*

11 724,00 kr

(exkl. moms)

14 656,00 kr

(inkl. moms)

Add to Basket
välj eller skriv kvantitet
I lager
  • Dessutom levereras 4 000 enhet(er) från den 29 december 2025
Behöver du mer? Ange den kvantitet du behöver och klicka på "Kontrollera leveransdatum"
Enheter
Per enhet
Per rulle*
4000 +2,931 kr11 724,00 kr

*vägledande pris

RS-artikelnummer:
257-9386
Tillv. art.nr:
IRFHM3911TRPBF
Tillverkare / varumärke:
Infineon
Hitta liknande produkter genom att välja ett eller flera attribut.
Välj alla

Brand

Infineon

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

3.2A

Maximum Drain Source Voltage Vds

100V

Series

HEXFET

Package Type

PQFN

Mount Type

Through Hole

Maximum Drain Source Resistance Rds

15mΩ

Forward Voltage Vf

1.3V

Standards/Approvals

No

Automotive Standard

No

The Infineon IRFHM series is the 100V single n channel IR mosfet in a PQFN 3.3x3.3 package. The IR mosfet family of power mosfets utilizes proven silicon processes offering designers a wide portfolio of devices to support various applications such as dc motors, inverters, SMPS, lighting, load switches as well as battery powered applications.The devices are available in a variety of surface mount and through-hole packages with industry standard footprints for ease of design.

Planar cell structure for wide SOA
Optimized for broadest availability from distribution partners
Product qualification according to JEDEC standard
Silicon optimized for applications switching below 100 kHz
Industry standard surface mount package


Planar cell structure for wide SOA

Optimized for broadest availability from distribution partners

Product qualification according to JEDEC standard

Silicon optimized for applications switching below 100 kHz

Industry standard surface mount package

relaterade länkar