Infineon HEXFET Type N-Channel MOSFET, 57 A, 100 V SO-8

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49 171,20 kr

(exkl. moms)

61 464,00 kr

(inkl. moms)

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4800 +10,244 kr49 171,20 kr

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RS-artikelnummer:
257-9295
Tillv. art.nr:
IRF6644TRPBF
Tillverkare / varumärke:
Infineon
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Brand

Infineon

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

57A

Maximum Drain Source Voltage Vds

100V

Package Type

SO-8

Series

HEXFET

Maximum Drain Source Resistance Rds

13mΩ

Minimum Operating Temperature

-55°C

Maximum Gate Source Voltage Vgs

20 V

Forward Voltage Vf

1.3V

Typical Gate Charge Qg @ Vgs

28nC

Maximum Power Dissipation Pd

89W

Maximum Operating Temperature

150°C

Standards/Approvals

RoHS

Automotive Standard

No

The Infineon IRF series is the strong IRFET power mosfet family is optimized for low RDS (on) and high current capability. The devices are ideal for low frequency applications requiring performance and ruggedness.

Optimized for broadest availability from distribution partners

Product qualification according to JEDEC standard

High current rating

Dual side cooling capability

Low package height of 0.7mm

Low parasitic (1 to 2 nH) inductance package

100 percent lead free (No RoHS exemption)

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