Infineon HEXFET Type N-Channel MOSFET, 57 A, 100 V Enhancement, 3-Pin TO-220 IRF3710PBF

RS-artikelnummer:: 540-9812
Distrelec artikelnummer:: 302-84-009
Tillv. art.nr:: IRF3710PBF
Tillverkare / varumärke:: Infineon

Infineon HEXFET Type N-Channel MOSFET, 57 A, 100 V Enhancement, 3-Pin TO-220 IRF3710PBF

Mängdrabatt möjlig

Antal (1 enhet)*

17,07 kr

(exkl. moms)

21,34 kr

(inkl. moms)

GRATIS leverans för online beställningar över 500,00 kr

I lager

177 enhet(er) är redo att levereras
Plus 68 enhet(er) är redo att levereras från en annan plats
Dessutom levereras 343 enhet(er) från den 01 januari 2026

Behöver du mer? Ange den kvantitet du behöver och klicka på "Kontrollera leveransdatum"

Enheter	Per enhet
1 - 9	17,07 kr
10 - 49	14,56 kr
50 - 99	13,66 kr
100 - 249	12,66 kr
250 +	11,76 kr

*vägledande pris

RS-artikelnummer:: 540-9812
Distrelec artikelnummer:: 302-84-009
Tillv. art.nr:: IRF3710PBF
Tillverkare / varumärke:: Infineon

Specifikationer

Datablad

Lagstiftning och ursprungsland

Produktdetaljer

Hitta liknande produkter genom att välja ett eller flera attribut.

Välj alla	Attribut	Värde
	Brand	Infineon
	Product Type	MOSFET
	Channel Type	Type N
	Maximum Continuous Drain Current Id	57A
	Maximum Drain Source Voltage Vds	100V
	Package Type	TO-220
	Series	HEXFET
	Mount Type	Through Hole
	Pin Count	3
	Maximum Drain Source Resistance Rds	23mΩ
	Channel Mode	Enhancement
	Forward Voltage Vf	1.2V
	Typical Gate Charge Qg @ Vgs	130nC
	Maximum Gate Source Voltage Vgs	20 V
	Maximum Power Dissipation Pd	200W
	Minimum Operating Temperature	-55°C
	Maximum Operating Temperature	175°C
	Width	4.69 mm
	Length	10.54mm
	Height	8.77mm
	Standards/Approvals	No
	Distrelec Product Id	302-84-009
	Automotive Standard	No

	Välj alla
	Brand Infineon
	Product Type MOSFET
	Channel Type Type N
	Maximum Continuous Drain Current Id 57A
	Maximum Drain Source Voltage Vds 100V
	Package Type TO-220
	Series HEXFET
	Mount Type Through Hole
	Pin Count 3
	Maximum Drain Source Resistance Rds 23mΩ
	Channel Mode Enhancement
	Forward Voltage Vf 1.2V
	Typical Gate Charge Qg @ Vgs 130nC
	Maximum Gate Source Voltage Vgs 20 V
	Maximum Power Dissipation Pd 200W
	Minimum Operating Temperature -55°C
	Maximum Operating Temperature 175°C
	Width 4.69 mm
	Length 10.54mm
	Height 8.77mm
	Standards/Approvals No
	Distrelec Product Id 302-84-009
	Automotive Standard No

Logga in för att ladda ner CAD-modeller

COO (Country of Origin):: PH

Infineon HEXFET Series MOSFET, 57A Maximum Continuous Drain Current, 200W Maximum Power Dissipation - IRF3710PBF

This MOSFET is a durable power semiconductor that is essential in various electronic applications. It is designed for high efficiency, excelling in settings that require low resistance and superior thermal performance, making it important for contemporary electronics in fields such as automation and mechanical systems.

Features & Benefits

• Utilises HEXFET technology for low on-resistance

• Handles a maximum continuous drain current of 57A

• Functions effectively within a drain-source voltage of 100V

• Enables fast switching capabilities to enhance overall performance

• Designed for operation at a maximum junction temperature of +175°C

• Optimised for thermal management with minimal heat generation

Applications

• Utilised in automotive power systems for efficient energy management

• Suitable for power supply circuits to enhance energy efficiency

• Applicable in motor control systems for high current scenarios

• Effective in industrial automation for consistent performance under load

What is the significance of the low on-resistance in this MOSFET?

Low on-resistance reduces power losses and enhances efficiency, which is crucial for high-performance applications.

Can it be used in high-temperature environments?

Yes, it operates effectively up to a maximum junction temperature of +175°C, fitting for challenging applications.

How does the gate threshold voltage affect operation?

The gate threshold voltage of 2V to 4V ensures effective switching, allowing for precise control in various circuit designs.

What type of mounting is suitable for this device?

This MOSFET is intended for through-hole mounting, facilitating secure installation in numerous applications.

N-Channel Power MOSFET 100V, Infineon

The Infineon range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages. And form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.