Infineon HEXFET Type N-Channel MOSFET, 57 A, 100 V, 3-Pin TO-263

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5 574,40 kr

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6 968,00 kr

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RS-artikelnummer:
218-3095
Tillv. art.nr:
IRF3710STRLPBF
Tillverkare / varumärke:
Infineon
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Brand

Infineon

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

57A

Maximum Drain Source Voltage Vds

100V

Package Type

TO-263

Series

HEXFET

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

23mΩ

Forward Voltage Vf

1.2V

Maximum Power Dissipation Pd

3.8W

Maximum Gate Source Voltage Vgs

20 V

Typical Gate Charge Qg @ Vgs

86.7nC

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

175°C

Width

9.65 mm

Length

10.67mm

Height

4.83mm

Standards/Approvals

EIA 418

Automotive Standard

No

The Infineon HEXFET series N-channel power MOSFET. The HEXFET Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. It is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2.0W in a typical surface mount application.

Ultra Low On-Resistance

Dynamic dv/dt Rating

175°C Operating Temperature

Fast Switching

Lead-Free

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