Infineon HEXFET Type N-Channel MOSFET, -12 A, -30 V SO-8

Se alla MOSFETs
För närvarande inte tillgänglig
Vi vet inte om den här artikeln kommer tillbaka i lager, RS har för avsikt att ta bort den från vårt utbud snart.
RS-artikelnummer:
257-9335
Tillv. art.nr:
IRF9388TRPBF
Tillverkare / varumärke:
Infineon
Hitta liknande produkter genom att välja ett eller flera attribut.
Välj alla

Brand

Infineon

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

-12A

Maximum Drain Source Voltage Vds

-30V

Package Type

SO-8

Series

HEXFET

Mount Type

Surface

Maximum Drain Source Resistance Rds

11.9mΩ

Forward Voltage Vf

-1.2V

Typical Gate Charge Qg @ Vgs

18nC

Maximum Power Dissipation Pd

2.5W

Maximum Gate Source Voltage Vgs

25 V

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

150°C

Standards/Approvals

RoHS

Automotive Standard

No

The Infineon IRF series is the -30V p channel strong IRFET power mosfet in a SO 8 package. The strong IRFET power mosfet family is optimized for low RDS (on) and high current capability. The devices are ideal for low frequency applications requiring performance and ruggedness. The comprehensive portfolio addresses a broad range of applications including dc motors, battery management systems, inverters, and dc-dc converters.

Optimized for broadest availability from distribution partners

Product qualification according to JEDEC standard

Industry standard surface mount package

Silicon optimized for applications switching below 100 kHz

relaterade länkar