Infineon HEXFET Type N-Channel MOSFET, 33 A, 150 V TO-252 IRFR4615TRLPBF
- RS-artikelnummer:
- 257-5867
- Tillv. art.nr:
- IRFR4615TRLPBF
- Tillverkare / varumärke:
- Infineon
Mängdrabatt möjlig
Antal (1 förpackning med 5 enheter)*
61,60 kr
(exkl. moms)
77,00 kr
(inkl. moms)
GRATIS leverans för online beställningar över 500,00 kr
I lager
- Dessutom levereras 1 970 enhet(er) från den 19 januari 2026
Behöver du mer? Ange den kvantitet du behöver och klicka på "Kontrollera leveransdatum"
Enheter | Per enhet | Per förpackning* |
|---|---|---|
| 5 - 45 | 12,32 kr | 61,60 kr |
| 50 - 120 | 11,066 kr | 55,33 kr |
| 125 - 245 | 10,348 kr | 51,74 kr |
| 250 - 495 | 9,588 kr | 47,94 kr |
| 500 + | 6,16 kr | 30,80 kr |
*vägledande pris
- RS-artikelnummer:
- 257-5867
- Tillv. art.nr:
- IRFR4615TRLPBF
- Tillverkare / varumärke:
- Infineon
Specifikationer
Datablad
Lagstiftning och ursprungsland
Produktdetaljer
Hitta liknande produkter genom att välja ett eller flera attribut.
Välj alla | Attribut | Värde |
|---|---|---|
| Brand | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 33A | |
| Maximum Drain Source Voltage Vds | 150V | |
| Package Type | TO-252 | |
| Series | HEXFET | |
| Mount Type | PCB | |
| Maximum Drain Source Resistance Rds | 34mΩ | |
| Typical Gate Charge Qg @ Vgs | 26nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 144W | |
| Forward Voltage Vf | 1.3V | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| Välj alla | ||
|---|---|---|
Brand Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 33A | ||
Maximum Drain Source Voltage Vds 150V | ||
Package Type TO-252 | ||
Series HEXFET | ||
Mount Type PCB | ||
Maximum Drain Source Resistance Rds 34mΩ | ||
Typical Gate Charge Qg @ Vgs 26nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 144W | ||
Forward Voltage Vf 1.3V | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
The Infineon IR MOSFET family of power MOSFETs utilizes proven silicon processes offering designers a wide portfolio of devices to support various applications such as DC motors, inverters, SMPS, lighting, load switches as well as battery powered applications. The devices are available in a variety of surface mount and through-hole packages with industry standard footprints for ease of design.
Planar cell structure for wide SOA
Optimized for broadest availability from distribution partners
Product qualification according to JEDEC standard
Silicon optimized for applications switching below <100kHz
Industry standard surface mount package
relaterade länkar
- Infineon HEXFET Type N-Channel MOSFET 150 V TO-252
- Infineon HEXFET Type N-Channel MOSFET -150 V TO-252
- Infineon HEXFET Type N-Channel MOSFET -150 V TO-252 IRFR6215TRPBF
- Infineon HEXFET Type N-Channel MOSFET 150 V Enhancement, 3-Pin IPAK
- Infineon HEXFET Type N-Channel MOSFET 150 V Enhancement, 3-Pin IPAK IRFU4615PBF
- Infineon HEXFET Type N-Channel MOSFET 150 V Enhancement, 3-Pin TO-263
- Infineon HEXFET Type N-Channel MOSFET & Diode 150 V Enhancement, 3-Pin TO-252
- Infineon HEXFET Type N-Channel MOSFET 150 V Enhancement, 3-Pin TO-263 IRFS4615TRLPBF
