Vishay SiR Type N-Channel MOSFET, 116 A, 80 V, 8-Pin PowerPAK SO-8 SiR582DP-T1-RE3
- RS-artikelnummer:
- 239-5387
- Tillv. art.nr:
- SiR582DP-T1-RE3
- Tillverkare / varumärke:
- Vishay
Mängdrabatt möjlig
Antal (1 förpackning med 5 enheter)*
89,69 kr
(exkl. moms)
112,11 kr
(inkl. moms)
GRATIS leverans för online beställningar över 500,00 kr
I lager
- Dessutom levereras 3 275 enhet(er) från den 05 januari 2026
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Enheter | Per enhet | Per förpackning* |
|---|---|---|
| 5 - 45 | 17,938 kr | 89,69 kr |
| 50 - 120 | 16,862 kr | 84,31 kr |
| 125 - 245 | 15,268 kr | 76,34 kr |
| 250 - 495 | 14,336 kr | 71,68 kr |
| 500 + | 13,458 kr | 67,29 kr |
*vägledande pris
- RS-artikelnummer:
- 239-5387
- Tillv. art.nr:
- SiR582DP-T1-RE3
- Tillverkare / varumärke:
- Vishay
Specifikationer
Datablad
Lagstiftning och ursprungsland
Produktdetaljer
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Välj alla | Attribut | Värde |
|---|---|---|
| Brand | Vishay | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 116A | |
| Maximum Drain Source Voltage Vds | 80V | |
| Package Type | PowerPAK SO-8 | |
| Series | SiR | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 0.0034Ω | |
| Typical Gate Charge Qg @ Vgs | 33.5nC | |
| Maximum Power Dissipation Pd | 92.5W | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | ±20 V | |
| Maximum Operating Temperature | 150°C | |
| Length | 6.15mm | |
| Standards/Approvals | RoHS | |
| Width | 5.15 mm | |
| Välj alla | ||
|---|---|---|
Brand Vishay | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 116A | ||
Maximum Drain Source Voltage Vds 80V | ||
Package Type PowerPAK SO-8 | ||
Series SiR | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 0.0034Ω | ||
Typical Gate Charge Qg @ Vgs 33.5nC | ||
Maximum Power Dissipation Pd 92.5W | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs ±20 V | ||
Maximum Operating Temperature 150°C | ||
Length 6.15mm | ||
Standards/Approvals RoHS | ||
Width 5.15 mm | ||
The Vishay TrenchFET N channel power MOSFET has drain current of 116 A. It is used in synchronous rectification, primary side switch, DC/DC converter and motor drive switch.
Very low RDS x Qg figure-of-merit (FOM)
Tuned for the lowest RDS x Qoss FOM
100 % Rg and UIS tested
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