Infineon SIPMOS® Type N-Channel MOSFET, 21 mA, 600 V Depletion, 3-Pin SOT-23 BSS126IXTSA1
- RS-artikelnummer:
- 236-4398
- Tillv. art.nr:
- BSS126IXTSA1
- Tillverkare / varumärke:
- Infineon
Mängdrabatt möjlig
Antal (1 förpackning med 10 enheter)*
20,72 kr
(exkl. moms)
25,90 kr
(inkl. moms)
GRATIS leverans för online beställningar över 500,00 kr
I lager
- Dessutom levereras 4 340 enhet(er) från den 29 december 2025
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Enheter | Per enhet | Per förpackning* |
|---|---|---|
| 10 - 90 | 2,072 kr | 20,72 kr |
| 100 - 240 | 1,96 kr | 19,60 kr |
| 250 - 490 | 1,882 kr | 18,82 kr |
| 500 - 990 | 1,803 kr | 18,03 kr |
| 1000 + | 1,456 kr | 14,56 kr |
*vägledande pris
- RS-artikelnummer:
- 236-4398
- Tillv. art.nr:
- BSS126IXTSA1
- Tillverkare / varumärke:
- Infineon
Specifikationer
Datablad
Lagstiftning och ursprungsland
Produktdetaljer
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Välj alla | Attribut | Värde |
|---|---|---|
| Brand | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 21mA | |
| Maximum Drain Source Voltage Vds | 600V | |
| Series | SIPMOS® | |
| Package Type | SOT-23 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 700Ω | |
| Channel Mode | Depletion | |
| Maximum Power Dissipation Pd | 0.5W | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Forward Voltage Vf | 1.2V | |
| Typical Gate Charge Qg @ Vgs | 1.4nC | |
| Maximum Operating Temperature | 150°C | |
| Length | 3mm | |
| Standards/Approvals | No | |
| Width | 1.4 mm | |
| Height | 1.1mm | |
| Automotive Standard | No | |
| Välj alla | ||
|---|---|---|
Brand Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 21mA | ||
Maximum Drain Source Voltage Vds 600V | ||
Series SIPMOS® | ||
Package Type SOT-23 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 700Ω | ||
Channel Mode Depletion | ||
Maximum Power Dissipation Pd 0.5W | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Forward Voltage Vf 1.2V | ||
Typical Gate Charge Qg @ Vgs 1.4nC | ||
Maximum Operating Temperature 150°C | ||
Length 3mm | ||
Standards/Approvals No | ||
Width 1.4 mm | ||
Height 1.1mm | ||
Automotive Standard No | ||
The Infineon 600V N-channel small signal depletion-mode MOSFET is Pb-free lead plating, RoHS compliant and halogen-free according to IEC61249-2-21. Fully qualified according to JEDEC for industrial applications. It has Industry standard qualification level.
High system reliability
Environmentally friendly
PCB space and cost saving
dv/dt rated
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