STMicroelectronics SCTW70N Type N-Channel MOSFET, 91 A, 1200 V Enhancement, 3-Pin Hip-247

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11 740,41 kr

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14 675,52 kr

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RS-artikelnummer:
233-3023
Tillv. art.nr:
SCTW70N120G2V
Tillverkare / varumärke:
STMicroelectronics
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Brand

STMicroelectronics

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

91A

Maximum Drain Source Voltage Vds

1200V

Package Type

Hip-247

Series

SCTW70N

Mount Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance Rds

21mΩ

Channel Mode

Enhancement

Forward Voltage Vf

2.7V

Minimum Operating Temperature

-55°C

Maximum Gate Source Voltage Vgs

22 V

Typical Gate Charge Qg @ Vgs

28nC

Maximum Power Dissipation Pd

547W

Maximum Operating Temperature

200°C

Height

20.15mm

Standards/Approvals

No

Length

15.75mm

Width

5.15 mm

Automotive Standard

No

The STMicroelectronics silicon carbide Power MOSFET is produced exploiting the advanced, innovative properties of wide bandgap materials. This results in unsurpassed on-resistance per unit area and very good switching performance almost independent of temperature. The outstanding thermal properties of the Sic material allow designers to use an industry-standard outline with significantly improved thermal capability. These features render the device perfectly suitable for high-efficiency and high power density applications.

Very high operating junction temperature capability (TJ = 200 °C)

Very fast and robust intrinsic body diode

Extremely low gate charge and input capacitances

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