STMicroelectronics SCTWA70N120G2V-4 Type N-Channel MOSFET, 91 A, 1200 V Enhancement, 4-Pin Hip-247 SCTWA70N120G2V-4
- RS-artikelnummer:
- 233-0475
- Tillv. art.nr:
- SCTWA70N120G2V-4
- Tillverkare / varumärke:
- STMicroelectronics
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|---|---|
| 1 + | 390,43 kr |
*vägledande pris
- RS-artikelnummer:
- 233-0475
- Tillv. art.nr:
- SCTWA70N120G2V-4
- Tillverkare / varumärke:
- STMicroelectronics
Specifikationer
Datablad
Lagstiftning och ursprungsland
Produktdetaljer
Hitta liknande produkter genom att välja ett eller flera attribut.
Välj alla | Attribut | Värde |
|---|---|---|
| Brand | STMicroelectronics | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 91A | |
| Maximum Drain Source Voltage Vds | 1200V | |
| Series | SCTWA70N120G2V-4 | |
| Package Type | Hip-247 | |
| Mount Type | Through Hole | |
| Pin Count | 4 | |
| Maximum Drain Source Resistance Rds | 30mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 547W | |
| Forward Voltage Vf | 2.7V | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 150nC | |
| Maximum Gate Source Voltage Vgs | 22 V | |
| Maximum Operating Temperature | 200°C | |
| Length | 34.8mm | |
| Standards/Approvals | No | |
| Height | 5mm | |
| Width | 15.6 mm | |
| Automotive Standard | No | |
| Välj alla | ||
|---|---|---|
Brand STMicroelectronics | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 91A | ||
Maximum Drain Source Voltage Vds 1200V | ||
Series SCTWA70N120G2V-4 | ||
Package Type Hip-247 | ||
Mount Type Through Hole | ||
Pin Count 4 | ||
Maximum Drain Source Resistance Rds 30mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 547W | ||
Forward Voltage Vf 2.7V | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 150nC | ||
Maximum Gate Source Voltage Vgs 22 V | ||
Maximum Operating Temperature 200°C | ||
Length 34.8mm | ||
Standards/Approvals No | ||
Height 5mm | ||
Width 15.6 mm | ||
Automotive Standard No | ||
The STMicroelectronics silicon carbide Power MOSFET device has been developed using ST’s advanced and innovative 2nd generation SiC MOSFET technology. The device features remarkably low on-resistance per unit area and very good switching performance. The variation of switching loss is almost independent of junction temperature.
Very fast and robust intrinsic body diode
Extremely low gate charge and input capacitance
Very high operating junction temperature capability (TJ = 200 °C)
Source sensing pin for increased efficiency
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