STMicroelectronics SCTWA70N120G2V-4 Type N-Channel MOSFET, 91 A, 1200 V Enhancement, 4-Pin Hip-247 SCTWA70N120G2V-4
- RS-artikelnummer:
- 233-0475
- Tillv. art.nr:
- SCTWA70N120G2V-4
- Tillverkare / varumärke:
- STMicroelectronics
Antal (1 enhet)*
390,43 kr
(exkl. moms)
488,04 kr
(inkl. moms)
GRATIS leverans för online beställningar över 500,00 kr
I lager
- 378 enhet(er) är redo att levereras
Behöver du mer? Ange den kvantitet du behöver och klicka på "Kontrollera leveransdatum"
Enheter | Per enhet |
|---|---|
| 1 + | 390,43 kr |
*vägledande pris
- RS-artikelnummer:
- 233-0475
- Tillv. art.nr:
- SCTWA70N120G2V-4
- Tillverkare / varumärke:
- STMicroelectronics
Specifikationer
Datablad
Lagstiftning och ursprungsland
Produktdetaljer
Hitta liknande produkter genom att välja ett eller flera attribut.
Välj alla | Attribut | Värde |
|---|---|---|
| Brand | STMicroelectronics | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 91A | |
| Maximum Drain Source Voltage Vds | 1200V | |
| Series | SCTWA70N120G2V-4 | |
| Package Type | Hip-247 | |
| Mount Type | Through Hole | |
| Pin Count | 4 | |
| Maximum Drain Source Resistance Rds | 30mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 150nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 22 V | |
| Maximum Power Dissipation Pd | 547W | |
| Forward Voltage Vf | 2.7V | |
| Maximum Operating Temperature | 200°C | |
| Height | 5mm | |
| Length | 34.8mm | |
| Width | 15.6 mm | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Välj alla | ||
|---|---|---|
Brand STMicroelectronics | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 91A | ||
Maximum Drain Source Voltage Vds 1200V | ||
Series SCTWA70N120G2V-4 | ||
Package Type Hip-247 | ||
Mount Type Through Hole | ||
Pin Count 4 | ||
Maximum Drain Source Resistance Rds 30mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 150nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 22 V | ||
Maximum Power Dissipation Pd 547W | ||
Forward Voltage Vf 2.7V | ||
Maximum Operating Temperature 200°C | ||
Height 5mm | ||
Length 34.8mm | ||
Width 15.6 mm | ||
Standards/Approvals No | ||
Automotive Standard No | ||
The STMicroelectronics silicon carbide Power MOSFET device has been developed using ST’s advanced and innovative 2nd generation SiC MOSFET technology. The device features remarkably low on-resistance per unit area and very good switching performance. The variation of switching loss is almost independent of junction temperature.
Very fast and robust intrinsic body diode
Extremely low gate charge and input capacitance
Very high operating junction temperature capability (TJ = 200 °C)
Source sensing pin for increased efficiency
relaterade länkar
- STMicroelectronics SCTWA70N120G2V-4 Type N-Channel MOSFET 1200 V Enhancement, 4-Pin Hip-247
- STMicroelectronics SCTW70N Type N-Channel MOSFET 1200 V Enhancement, 3-Pin Hip-247
- STMicroelectronics SCTW70N Type N-Channel MOSFET 1200 V Enhancement, 3-Pin Hip-247 SCTW70N120G2V
- STMicroelectronics SCTWA40N12G24AG Type N-Channel MOSFET 1200 V Enhancement, 4-Pin Hip-247
- STMicroelectronics SCTW Type N-Channel MOSFET 1200 V Enhancement, 4-Pin Hip-247
- STMicroelectronics SCTW Type N-Channel MOSFET 1200 V Enhancement, 4-Pin Hip-247 SCTWA60N120G2-4
- STMicroelectronics SCT Type N-Channel MOSFET 1200 V Enhancement, 4-Pin Hip-247-4 SCT040W120G3-4
- STMicroelectronics SCTWA40N12G24AG Type N-Channel MOSFET 1200 V Enhancement, 4-Pin Hip-247 SCTWA40N12G24AG