STMicroelectronics Type N-Channel MOSFET, 45 A, 1200 V Enhancement, 3-Pin Hip-247

Antal (1 rör med 30 enheter)*

5 873,94 kr

(exkl. moms)

7 342,44 kr

(inkl. moms)

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RS-artikelnummer:
168-8966
Tillv. art.nr:
SCT30N120
Tillverkare / varumärke:
STMicroelectronics
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Brand

STMicroelectronics

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

45A

Maximum Drain Source Voltage Vds

1200V

Package Type

Hip-247

Mount Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance Rds

100mΩ

Channel Mode

Enhancement

Maximum Gate Source Voltage Vgs

25 V

Maximum Power Dissipation Pd

270W

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

105nC

Forward Voltage Vf

3.5V

Maximum Operating Temperature

200°C

Length

15.75mm

Standards/Approvals

No

Width

5.15 mm

Height

20.15mm

Automotive Standard

No

COO (Country of Origin):
CN

N-Channel Silicon Carbide (SiC) MOSFET, STMicroelectronics


Silicon carbide (SiC) MOSFETs feature very low static drain-source on-resistance for the 1200V rating combined with excellent switching performance, translating into more efficient and Compact systems.

MOSFET Transistors, STMicroelectronics


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