STMicroelectronics SCTW40N Type N-Channel MOSFET, 36 A, 1200 V Enhancement, 3-Pin Hip-247

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4 906,17 kr

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6 132,72 kr

(inkl. moms)

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RS-artikelnummer:
219-4227
Tillv. art.nr:
SCTW40N120G2V
Tillverkare / varumärke:
STMicroelectronics
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Brand

STMicroelectronics

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

36A

Maximum Drain Source Voltage Vds

1200V

Series

SCTW40N

Package Type

Hip-247

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

700mΩ

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

13nC

Maximum Power Dissipation Pd

278W

Forward Voltage Vf

3.3V

Maximum Gate Source Voltage Vgs

22 V

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

175°C

Width

5.15 mm

Length

15.75mm

Height

20.15mm

Standards/Approvals

No

Automotive Standard

No

The STMicroelectronics silicon carbide power MOSFET device has been developed using ST’s advanced and innovative 2nd generation Sic MOSFET technology. The device features remarkably low on-resistance per unit area and very good switching performance. The variation of switching loss is almost independent of junction temperature.

Very high operating junction temperature capability (TJ = 200 °C)

Very fast and robust intrinsic body diode

Extremely low gate charge and input capacitance

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