Infineon Dual IPG 2 Type N-Channel Power Transistor, 20 A, 40 V Enhancement, 8-Pin SuperSO IPG20N04S4L11AATMA1
- RS-artikelnummer:
- 229-1845
- Tillv. art.nr:
- IPG20N04S4L11AATMA1
- Tillverkare / varumärke:
- Infineon
Mängdrabatt möjlig
Antal (1 förpackning med 15 enheter)*
126,195 kr
(exkl. moms)
157,74 kr
(inkl. moms)
GRATIS leverans för online beställningar över 500,00 kr
I lager
- Dessutom levereras 4 950 enhet(er) från den 29 december 2025
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Enheter | Per enhet | Per förpackning* |
|---|---|---|
| 15 - 60 | 8,413 kr | 126,20 kr |
| 75 - 135 | 7,989 kr | 119,84 kr |
| 150 - 360 | 7,661 kr | 114,92 kr |
| 375 - 735 | 7,325 kr | 109,88 kr |
| 750 + | 6,825 kr | 102,38 kr |
*vägledande pris
- RS-artikelnummer:
- 229-1845
- Tillv. art.nr:
- IPG20N04S4L11AATMA1
- Tillverkare / varumärke:
- Infineon
Specifikationer
Datablad
Lagstiftning och ursprungsland
Produktdetaljer
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Välj alla | Attribut | Värde |
|---|---|---|
| Brand | Infineon | |
| Product Type | Power Transistor | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 20A | |
| Maximum Drain Source Voltage Vds | 40V | |
| Series | IPG | |
| Package Type | SuperSO | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 11.6mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 41W | |
| Maximum Gate Source Voltage Vgs | 16 V | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 0.9V | |
| Typical Gate Charge Qg @ Vgs | 20nC | |
| Maximum Operating Temperature | 175°C | |
| Transistor Configuration | Dual | |
| Length | 5.15mm | |
| Standards/Approvals | AEC-Q101 | |
| Height | 1mm | |
| Width | 5.9 mm | |
| Number of Elements per Chip | 2 | |
| Automotive Standard | AEC-Q101 | |
| Välj alla | ||
|---|---|---|
Brand Infineon | ||
Product Type Power Transistor | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 20A | ||
Maximum Drain Source Voltage Vds 40V | ||
Series IPG | ||
Package Type SuperSO | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 11.6mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 41W | ||
Maximum Gate Source Voltage Vgs 16 V | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 0.9V | ||
Typical Gate Charge Qg @ Vgs 20nC | ||
Maximum Operating Temperature 175°C | ||
Transistor Configuration Dual | ||
Length 5.15mm | ||
Standards/Approvals AEC-Q101 | ||
Height 1mm | ||
Width 5.9 mm | ||
Number of Elements per Chip 2 | ||
Automotive Standard AEC-Q101 | ||
The Infineon dual n channel logic level MOSFET is feasible for automatic optical inspection. It has 175°C operating temperature and 100 percent avalanche tested.
It is RoHS compliant and AEC Q101 qualified
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