Infineon iPB Type P-Channel MOSFET, 120 A, 40 V Enhancement, 3-Pin TO-263

RS-artikelnummer:: 229-1818
Tillv. art.nr:: IPB120P04P4L03ATMA2
Tillverkare / varumärke:: Infineon

Infineon iPB Type P-Channel MOSFET, 120 A, 40 V Enhancement, 3-Pin TO-263

Antal (1 rulle med 1000 enheter)*

16 165,00 kr

(exkl. moms)

20 206,00 kr

(inkl. moms)

GRATIS leverans för online beställningar över 500,00 kr

Tillfälligt slut

Leverans från den 30 mars 2026

Behöver du mer? Ange den kvantitet du behöver och klicka på "Kontrollera leveransdatum"

Enheter	Per enhet	Per rulle*
1000 +	16,165 kr	16 165,00 kr

*vägledande pris

RS-artikelnummer:: 229-1818
Tillv. art.nr:: IPB120P04P4L03ATMA2
Tillverkare / varumärke:: Infineon

Specifikationer

Datablad

Lagstiftning och ursprungsland

Produktdetaljer

Hitta liknande produkter genom att välja ett eller flera attribut.

Välj alla	Attribut	Värde
	Brand	Infineon
	Channel Type	Type P
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	120A
	Maximum Drain Source Voltage Vds	40V
	Series	iPB
	Package Type	TO-263
	Mount Type	Surface
	Pin Count	3
	Maximum Drain Source Resistance Rds	3.1mΩ
	Channel Mode	Enhancement
	Standards/Approvals	No
	Automotive Standard	AEC-Q101

	Välj alla
	Brand Infineon
	Channel Type Type P
	Product Type MOSFET
	Maximum Continuous Drain Current Id 120A
	Maximum Drain Source Voltage Vds 40V
	Series iPB
	Package Type TO-263
	Mount Type Surface
	Pin Count 3
	Maximum Drain Source Resistance Rds 3.1mΩ
	Channel Mode Enhancement
	Standards/Approvals No
	Automotive Standard AEC-Q101

Datasheet - IPB120P04P4L03ATMA2

IPB120P04P4L-03, -40V, P-Ch, 3.1 mΩ max, Automotive MOSFET, D2PAK, OptiMOS™-P2

The Infineon p channel logic level MOSFET has highest current capability and 100 percent avalanche tested. It has lowest switching and conduction power losses for highest thermal efficiency.

Summary of Features

•P-channel - Logic Level - Enhancement mode

•AEC qualified

•MSL1 up to 260°C peak reflow

•175°C operating temperature

•Green package (RoHS compliant)

•100% Avalanche tested

Benefits

•No charge pump required for high side drive.

•Simple interface drive circuit

•World's lowest RDSon at 40V

•Highest current capability

•Lowest switching and conduction power losses for highest thermal efficiency

•Robust packages with superior quality and reliability

•Standard packages TO-252, TO-263, TO-220, TO-262

Potential Applications

•High-Side MOSFETs for motor bridges (half-bridges, H-bridges, 3-phase-motors)

•Bridge configuration could be realized with 40V P-Channel as high side device with no need of charge pump