Infineon AUIRF Type P-Channel MOSFET, 13 A, 100 V Enhancement, 3-Pin TO-252 AUIRFR5410TRL
- RS-artikelnummer:
- 229-1742
- Tillv. art.nr:
- AUIRFR5410TRL
- Tillverkare / varumärke:
- Infineon
Mängdrabatt möjlig
Antal (1 förpackning med 5 enheter)*
143,97 kr
(exkl. moms)
179,96 kr
(inkl. moms)
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- Dessutom levereras 8 540 enhet(er) från den 19 januari 2026
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Enheter | Per enhet | Per förpackning* |
|---|---|---|
| 5 - 20 | 28,794 kr | 143,97 kr |
| 25 - 45 | 25,356 kr | 126,78 kr |
| 50 - 120 | 23,90 kr | 119,50 kr |
| 125 - 245 | 22,176 kr | 110,88 kr |
| 250 + | 20,474 kr | 102,37 kr |
*vägledande pris
- RS-artikelnummer:
- 229-1742
- Tillv. art.nr:
- AUIRFR5410TRL
- Tillverkare / varumärke:
- Infineon
Specifikationer
Datablad
Lagstiftning och ursprungsland
Produktdetaljer
Hitta liknande produkter genom att välja ett eller flera attribut.
Välj alla | Attribut | Värde |
|---|---|---|
| Brand | Infineon | |
| Channel Type | Type P | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 13A | |
| Maximum Drain Source Voltage Vds | 100V | |
| Package Type | TO-252 | |
| Series | AUIRF | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 205mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 66W | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Typical Gate Charge Qg @ Vgs | 58nC | |
| Forward Voltage Vf | -1.6V | |
| Maximum Operating Temperature | 150°C | |
| Length | 6.22mm | |
| Standards/Approvals | No | |
| Width | 6.73 mm | |
| Height | 2.39mm | |
| Automotive Standard | AEC-Q101 | |
| Välj alla | ||
|---|---|---|
Brand Infineon | ||
Channel Type Type P | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 13A | ||
Maximum Drain Source Voltage Vds 100V | ||
Package Type TO-252 | ||
Series AUIRF | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 205mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 66W | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Typical Gate Charge Qg @ Vgs 58nC | ||
Forward Voltage Vf -1.6V | ||
Maximum Operating Temperature 150°C | ||
Length 6.22mm | ||
Standards/Approvals No | ||
Width 6.73 mm | ||
Height 2.39mm | ||
Automotive Standard AEC-Q101 | ||
The Infineon p channel MOSFET utilizes the latest processing techniques to achieve low on resistance per silicon area. This benefit combined with the fast switching speed and ruggedized device design that HEXFET power are well known for, provides the designer with an extremely efficient and reliable device for use in automotive and a wide variety of other applications.
It is lead free
It is RoHS compliant
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