Infineon IPB65R Type N-Channel MOSFET, 18 A, 600 V Enhancement, 3-Pin TO-263 IPB60R180P7ATMA1
- RS-artikelnummer:
- 222-4895
- Tillv. art.nr:
- IPB60R180P7ATMA1
- Tillverkare / varumärke:
- Infineon
Mängdrabatt möjlig
Antal (1 förpackning med 5 enheter)*
135,66 kr
(exkl. moms)
169,575 kr
(inkl. moms)
GRATIS leverans för online beställningar över 500,00 kr
I lager
- Dessutom levereras 925 enhet(er) från den 29 december 2025
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Enheter | Per enhet | Per förpackning* |
|---|---|---|
| 5 - 45 | 27,132 kr | 135,66 kr |
| 50 - 120 | 24,124 kr | 120,62 kr |
| 125 - 245 | 22,512 kr | 112,56 kr |
| 250 - 495 | 20,90 kr | 104,50 kr |
| 500 + | 19,532 kr | 97,66 kr |
*vägledande pris
- RS-artikelnummer:
- 222-4895
- Tillv. art.nr:
- IPB60R180P7ATMA1
- Tillverkare / varumärke:
- Infineon
Specifikationer
Datablad
Lagstiftning och ursprungsland
Produktdetaljer
Hitta liknande produkter genom att välja ett eller flera attribut.
Välj alla | Attribut | Värde |
|---|---|---|
| Brand | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 18A | |
| Maximum Drain Source Voltage Vds | 600V | |
| Package Type | TO-263 | |
| Series | IPB65R | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 180mΩ | |
| Channel Mode | Enhancement | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Välj alla | ||
|---|---|---|
Brand Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 18A | ||
Maximum Drain Source Voltage Vds 600V | ||
Package Type TO-263 | ||
Series IPB65R | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 180mΩ | ||
Channel Mode Enhancement | ||
Standards/Approvals No | ||
Automotive Standard No | ||
The Infineon 600V CoolMOS™ P7 superjunction (SJ) MOSFET is the successor to the 600V CoolMOS™ P6 series. It continues to balance the need for high efficiency against the ease-of-use in the design process. The best-in-class R onxA and the inherently low gate charge (Q G) of the CoolMOS™ 7th generation platform ensure its high efficiency.
ESD ruggedness of ≥ 2kV (HBM class 2)
Integrated gate resistor R G
Rugged body diode
Wide portfolio in through hole and surface mount packages
Both standard grade and industrial grade parts are available
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